PBHV9040Z Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBHV9040Z

Código: V9040Z

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.7 W

Tensión colector-base (Vcb): 500 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.25 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 55 MHz

Capacitancia de salida (Cc): 7 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT223

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PBHV9040Z datasheet

 ..1. Size:130K  philips
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PBHV9040Z

PBHV9040Z 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02 15 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8540Z. 1.2 Features High voltage Low collector-emit

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PBHV9040Z

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:118K  philips
 pbhv9040t.pdf pdf_icon

PBHV9040Z

PBHV9040T 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02 15 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8540T. 1.2 Features High voltage Low collector-emitter s

 6.2. Size:244K  nxp
 pbhv9040x.pdf pdf_icon

PBHV9040Z

PBHV9040X 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor 9 December 2013 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8540X. 2. Features and benefits High voltage Low collector-emitte

MOSTRAR MÁS

Otros transistores... 3CA80E, PBHV8115T, PBHV8115Z, PBHV8140Z, PBHV8215Z, PBHV8540T, PBHV8540Z, PBHV9040T, D882P, PBHV9050T, PBHV9115T, PBHV9115Z, PBHV9215Z, PBHV9540Z, PBLS1501V, PBLS1501Y, PBLS1502V