PBHV9040Z Todos los transistores

 

PBHV9040Z . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBHV9040Z
   Código: V9040Z
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.7 W
   Tensión colector-base (Vcb): 500 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.25 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 55 MHz
   Capacitancia de salida (Cc): 7 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT223
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PBHV9040Z Datasheet (PDF)

 ..1. Size:130K  philips
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PBHV9040Z

PBHV9040Z500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistorRev. 02 15 January 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8540Z.1.2 Features High voltage Low collector-emit

 ..2. Size:247K  nxp
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PBHV9040Z

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:118K  philips
pbhv9040t.pdf pdf_icon

PBHV9040Z

PBHV9040T500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistorRev. 02 15 January 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8540T.1.2 Features High voltage Low collector-emitter s

 6.2. Size:244K  nxp
pbhv9040x.pdf pdf_icon

PBHV9040Z

PBHV9040X500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor9 December 2013 Product data sheet1. General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89(SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8540X.2. Features and benefits High voltage Low collector-emitte

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