PBLS2003D
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBLS2003D
Código: F8
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6
W
Tensión colector-emisor (Vce): 20
V
Corriente del colector DC máxima (Ic): 1
A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
SC74
Búsqueda de reemplazo de transistor bipolar PBLS2003D
PBLS2003D
Datasheet (PDF)
..1. Size:158K philips
pbls2003d.pdf
PBLS2003D20 V PNP BISS loadswitchRev. 02 27 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low
6.1. Size:104K nxp
pbls2003s.pdf
PBLS2003S20 V PNP BISS loadswitchRev. 02 24 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one pack
7.1. Size:157K philips
pbls2001d.pdf
PBLS2001D20 V PNP BISS loadswitchRev. 02 27 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low
7.2. Size:150K philips
pbls2004d.pdf
PBLS2004D20 V PNP BISS loadswitchRev. 01 23 June 2005 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low th
7.3. Size:104K nxp
pbls2002s.pdf
PBLS2002S20 V PNP BISS loadswitchRev. 02 24 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one pack
7.4. Size:102K nxp
pbls2001s.pdf
PBLS2001S20 V PNP BISS loadswitchRev. 02 24 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one pack
7.5. Size:153K nxp
pbls2002d.pdf
PBLS2002D20 V PNP BISS loadswitchRev. 02 27 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low
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