PBLS2004D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBLS2004D
Código: F9
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6 W
Tensión colector-emisor (Vce): 20 V
Corriente del colector DC máxima (Ic): 1 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: SC74
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PBLS2004D Datasheet (PDF)
pbls2004d.pdf

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pbls2001d.pdf

PBLS2001D20 V PNP BISS loadswitchRev. 02 27 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low
pbls2003d.pdf

PBLS2003D20 V PNP BISS loadswitchRev. 02 27 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low
pbls2003s.pdf

PBLS2003S20 V PNP BISS loadswitchRev. 02 24 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one pack
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 40351
History: 40351



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