PBLS4001Y Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBLS4001Y

Código: S1*

Material: Si

Polaridad de transistor: Pre-Biased-NPN*PNP

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 2.2 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-emisor (Vce): 40 V

Corriente del colector DC máxima (Ic): 0.5 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: SOT363

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PBLS4001Y datasheet

 6.1. Size:323K  nxp
pbls4001v-y.pdf pdf_icon

PBLS4001Y

PBLS4001Y; PBLS4001V 40 V PNP BISS loadswitch Rev. 03 12 February 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in one package. Table 1. Product overview Type number Package NXP JEITA PBLS4001Y SOT363 SC-88 PBLS4001V SOT666 - 1.2 Features Low VCEsat (B

 6.2. Size:148K  nxp
pbls4001d.pdf pdf_icon

PBLS4001Y

PBLS4001D 40 V PNP BISS loadswitch Rev. 03 5 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. 1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low

 7.1. Size:149K  nxp
pbls4003d.pdf pdf_icon

PBLS4001Y

PBLS4003D 40 V PNP BISS loadswitch Rev. 03 5 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. 1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low

 7.2. Size:148K  nxp
pbls4005d.pdf pdf_icon

PBLS4001Y

PBLS4005D 40 V PNP BISS loadswitch Rev. 03 6 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. 1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low

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