PBLS4004V . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBLS4004V
Código: K4
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-emisor (Vce): 40 V
Corriente del colector DC máxima (Ic): 0.5 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: SOT666
PBLS4004V Datasheet (PDF)
pbls4004v-y.pdf

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pbls4004d.pdf

PBLS4004D40 V PNP BISS loadswitchRev. 02 19 July 2005 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low th
pbls4001v-y.pdf

PBLS4001Y; PBLS4001V40 V PNP BISS loadswitchRev. 03 12 February 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in one package.Table 1. Product overviewType number PackageNXP JEITAPBLS4001Y SOT363 SC-88PBLS4001V SOT666 -1.2 Features Low VCEsat (B
pbls4001d.pdf

PBLS4001D40 V PNP BISS loadswitchRev. 03 5 January 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low
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