2N5614
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5614
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 70
MHz
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2N5614
2N5614
Datasheet (PDF)
..1. Size:118K inchange semiconductor
2n5614 2n5616 2n5618 2n5620.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5614 2N5616 2N5618 2N5620 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3
9.2. Size:11K semelab
2n5613.pdf
2N5613Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac
9.3. Size:11K semelab
2n5619.pdf
2N5619Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac
9.4. Size:11K semelab
2n5617.pdf
2N5617Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac
9.5. Size:11K semelab
2n5611.pdf
2N5611Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 100V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
9.6. Size:113K jmnic
2n5606 2n5608 2n5610 2n5612.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-66)
9.7. Size:126K jmnic
2n5605 2n5607 2n5609 2n5611.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-66)
9.8. Size:127K inchange semiconductor
2n5606 2n5608 2n5610 2n5612.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol
9.9. Size:118K inchange semiconductor
2n5613 2n5615 2n5617 2n5619.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5613 2N5615 2N5617 2N5619 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol
9.10. Size:50K inchange semiconductor
2n5610.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5610 DESCRIPTION DC Current Gain- : hFE= 70-200@IC= 2.5A Wide Area of Safe Operation Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) Complement to Type 2N5609 APPLICATIONS Designed for use in high frequency power amplifiers, audio power amplifier and drivers. ABSO
9.11. Size:126K inchange semiconductor
2n5612a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5612A DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsol
9.12. Size:127K inchange semiconductor
2n5605 2n5607 2n5609 2n5611.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol
9.13. Size:36K inchange semiconductor
2n5619.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5619 DESCRIPTION DC Current Gain- : hFE= 30-90@IC= -2.5A Wide Area of Safe Operation Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) Complement to Type 2N5620 APPLICATIONS Designed for use in high frequency power amplifiers, audio power amplifier and drivers. AB
9.14. Size:129K inchange semiconductor
2n5611a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5611A DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorAbsolu
9.15. Size:305K inchange semiconductor
2n5611.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5611 DESCRIPTION DC Current Gain- : hFE= 30-90@IC= -2.5A Wide Area of Safe Operation Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) Complement to Type 2N5612 APPLICATIONSDesigned for use in high frequency power amplifiers, audio power amplifier and drivers. ABS
Otros transistores... 2N5609
, 2N561
, 2N5610
, 2N5611
, 2N5611A
, 2N5612
, 2N5612A
, 2N5613
, 2N3906
, 2N5615
, 2N5616
, 2N5617
, 2N5618
, 2N5619
, 2N5620
, 2N5621
, 2N5622
.
