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PBLS4005Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBLS4005Y
   Código: S5*
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 47 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-emisor (Vce): 40 V
   Corriente del colector DC máxima (Ic): 0.5 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT363
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PBLS4005Y Datasheet (PDF)

 6.1. Size:148K  nxp
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PBLS4005Y

PBLS4005D40 V PNP BISS loadswitchRev. 03 6 January 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low

 6.2. Size:106K  nxp
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PBLS4005Y

PBLS4005Y; PBLS4005V40 V PNP BISS loadswitchRev. 03 16 February 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in one package.Table 1. Product overviewType number PackageNXP JEITAPBLS4005Y SOT363 SC-88PBLS4005V SOT666 -1.2 Features Low VCEsat (B

 7.1. Size:323K  nxp
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PBLS4005Y

PBLS4001Y; PBLS4001V40 V PNP BISS loadswitchRev. 03 12 February 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in one package.Table 1. Product overviewType number PackageNXP JEITAPBLS4001Y SOT363 SC-88PBLS4001V SOT666 -1.2 Features Low VCEsat (B

 7.2. Size:148K  nxp
pbls4001d.pdf pdf_icon

PBLS4005Y

PBLS4001D40 V PNP BISS loadswitchRev. 03 5 January 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 3DA5192

 

 
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