PBLS6003D
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBLS6003D
Código: F3
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6
W
Tensión colector-emisor (Vce): 60
V
Corriente del colector DC máxima (Ic): 1
A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
SC74
Búsqueda de reemplazo de transistor bipolar PBLS6003D
PBLS6003D
Datasheet (PDF)
..1. Size:137K nxp
pbls6003d.pdf
PBLS6003D60 V PNP BISS loadswitchRev. 02 7 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor andNPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface MountedDevice (SMD) plastic package.1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one pa
7.1. Size:138K nxp
pbls6002d.pdf
PBLS6002D60 V PNP BISS loadswitchRev. 02 7 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor andNPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface MountedDevice (SMD) plastic package.1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one pa
7.2. Size:137K nxp
pbls6004d.pdf
PBLS6004D60 V PNP BISS loadswitchRev. 02 7 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor andNPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface MountedDevice (SMD) plastic package.1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one pa
7.3. Size:137K nxp
pbls6005d.pdf
PBLS6005D60 V PNP BISS loadswitchRev. 02 7 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor andNPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface MountedDevice (SMD) plastic package.1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one pa
7.4. Size:136K nxp
pbls6001d.pdf
PBLS6001D60 V PNP BISS loadswitchRev. 02 7 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPNResistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device(SMD) plastic package.1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one pa
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