PBLS6024D
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBLS6024D
Código: KH
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6
W
Tensión colector-emisor (Vce): 60
V
Corriente del colector DC máxima (Ic): 1.5
A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta:
SC74
Búsqueda de reemplazo de transistor bipolar PBLS6024D
PBLS6024D
Datasheet (PDF)
..1. Size:109K nxp
pbls6024d.pdf
PBLS6024D60 V, 1.5 A PNP BISS loadswitchRev. 01 14 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package
7.1. Size:109K philips
pbls6022d.pdf
PBLS6022D60 V, 1.5 A PNP BISS loadswitchRev. 01 13 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package
7.2. Size:109K philips
pbls6021d.pdf
PBLS6021D60 V, 1.5 A PNP BISS loadswitchRev. 01 12 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package
7.3. Size:109K nxp
pbls6023d.pdf
PBLS6023D60 V, 1.5 A PNP BISS loadswitchRev. 01 13 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package
Otros transistores... 2SA1801
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, 2SA1805O
, 2SA1805R
, 2SA1806
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
.