PBRP113ZT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBRP113ZT
Código: *7M_-7M_p7M_t7M_W7M
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 1 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 0.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 11 pF
Ganancia de corriente contínua (hfe): 190
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar PBRP113ZT
PBRP113ZT Datasheet (PDF)
pbrp113zt.pdf
PBRP113ZTPNP 800 mA, 40 V BISS RET; R1 = 1 k, R2 = 10 kRev. 01 16 January 2008 Product data sheet1. Product profile1.1 General description800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plasticpackage.NPN complement: PBRN113ZT.1.2 Features 800 mA repetitive peak out
pbrp113e.pdf
PBRP113ETPNP 800 mA, 40 V BISS RET; R1 = 1 k, R2 = 1 kRev. 01 17 December 2007 Product data sheet1. Product profile1.1 General description800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plasticpackage.NPN complement: PBRN113ET.1.2 Features 800 mA repetitive peak out
pbrp123et.pdf
PBRP123ETPNP 800 mA, 40 V BISS RET; R1 = 2.2 k, R2 = 2.2 kRev. 01 16 January 2008 Product data sheet1. Product profile1.1 General description800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plasticpackage.NPN complement: PBRN123ET.1.2 Features 800 mA repetitive peak
pbrp123yt.pdf
PBRP123YTPNP 800 mA, 40 V BISS RET; R1 = 2.2 k, R2 = 10 kRev. 01 17 December 2007 Product data sheet1. Product profile1.1 General description800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plasticpackage.NPN complement: PBRN123YT.1.2 Features 800 mA repetitive peak
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
