PBSS2515E Todos los transistores

 ..1. Size:120K  philips
 pbss2515e.pdf

PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 02 21 April 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS3515E. 1.2 Features Low collector-emitter saturation voltage VCEsat High collecto

 6.1. Size:65K  philips
 pbss2515f 1.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2515F NPN transistor Product specification 2000 Oct 25 Philips Semiconductors Product specification NPN transistor PBSS2515F FEATURES PINNING Low VCEsat PIN DESCRIPTION High current capabilities. 1 base 2 emitter APPLICATIONS 3 collector Heavy duty battery powered equipment (automotive, telecom and audio video) such as

 6.2. Size:142K  philips
 pbss2515vs.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VS 15 V low VCE(sat) NPN double transistor Product data sheet 2004 Dec 23 Supersedes data of 2001 Nov 07 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN double transistor PBSS2515VS FEATURES QUICK REFERENCE DATA 300 mW total power dissipation SYMBOL PARAMETER MAX. UNIT Very small 1.6 1.2 mm ultra thin pac

 6.3. Size:99K  nxp
 pbss2515ypn.pdf

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 PBSS2515YPN 15 V low VCE(sat) NPN/PNP transistor Product data sheet 2005 Jan 11 Supersedes data of 2002 May 08 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515YPN FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current cap

 6.4. Size:83K  nxp
 pbss2515m.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2515M 15 V, 0.5 A NPN low VCEsat (BISS) transistor Product data sheet 2003 Sep 15 Supersedes data of 2003 Jun 17 NXP Semiconductors Product data sheet 15 V, 0.5 A PBSS2515M NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT

 6.5. Size:1143K  nxp
 pbss2515mb.pdf

PBSS2515MB 15 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 1 26 January 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement PBSS3515MB. 1.2 Features and benefits Leadless ultra small SMD plastic High

 6.6. Size:348K  nxp
 pbss2515vs.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.7. Size:84K  nxp
 pbss2515vpn.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VPN 15 V low VCEsat NPN/PNP transistor Product specification 2001 Nov 07 Supersedes data of 2001 Aug 31 Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor PBSS2515VPN FEATURES QUICK REFERENCE DATA 300 mW total power dissipation SYMBOL PARAMETER MAX. UNIT Very small 1.6 x 1.2 mm ultra thin packa