PBSS4320X Todos los transistores

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat (BISS) transistor Product data sheet 2004 Nov 03 Supersedes data of 2003 Dec 15 NXP Semiconductors Product data sheet 20 V, 3 A PBSS4320X NPN low VCEsat (BISS) transistor QUICK REFERENCE DATA FEATURES SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitter sa

DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product data sheet 2004 Mar 18 Supersedes data of 2002 Aug 08 NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor PBSS4320T FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNIT corresponding low RCEsat VCEO collector-emitter v

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D302 PBSS4350D 50 V low VCEsat NPN transistor Product data sheet 2001 Jul 13 Supersedes data of 2001 Jan 26 NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350D FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO collector-emit

PBSS4330PA 30 V, 3 A NPN low VCEsat (BISS) transistor Rev. 01 19 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5330PA. 1.2 Features and benefits

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat (BISS) transistor Product specification 2004 Nov 04 Supersedes data of 2003 Nov 21 Philips Semiconductors Product specification 50 V, 3 A PBSS4350X NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitte

DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D087 PBSS4350Z 50 V low VCEsat NPN transistor Product data sheet 2003 May 13 Supersedes data of 2003 Jan 20 NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350Z FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High collector current capability

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS4350D NPN transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification NPN transistor PBSS4350D FEATURES PINNING High current capabilities PIN DESCRIPTION Low VCEsat. 1 collector 2 collector APPLICATIONS 3 base Heavy duty battery powered equipment (Automotive, 4 emitter T

DISCRETE SEMICONDUCTORS DATA SHEET PBSS4350T 50 V; 3 A NPN low VCEsat (BISS) transistor Product data sheet 2004 Jan 09 Supersedes data of 2002 Aug 08 NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat PBSS4350T (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNIT corresponding low RCEs

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4330PA 30 V, 3 A NPN low VCEsat (BISS) transistor 7 April 2015 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5330PA. 2. Features and benefits Low collector-emitter saturatio

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Rev. 01 5 April 2007 Product data sheet 1. Product profile 1.1 General description NPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP Name PBSS4350

PBSS4360X 60 V, 3 A NPN low VCEsat BISS transistor 9 June 2017 Product data sheet 1. General description NPN low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBSS5360X 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capab

DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D087 PBSS4350Z 50 V low VCEsat NPN transistor Product data sheet 2003 May 13 Supersedes data of 2003 Jan 20 NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350Z FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High collector current capability

PBSS4350SS 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor Rev. 01 3 April 2007 Product data sheet 1. Product profile 1.1 General description NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/PNP PNP/PNP complement complement NXP Name PBSS4350S

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4330X 30 V, 3 A NPN low VCEsat (BISS) transistor Product specification 2004 Dec 06 Supersedes data of 2003 Nov 28 Philips Semiconductors Product specification 30 V, 3 A PBSS4330X NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitte

PBSS4360Z 60 V, 3 A NPN low VCEsat (BISS) transistor 26 February 2014 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS5360Z. 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capa

PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor 11 September 2014 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP complement PBSS5330PAS 2. F

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

SMD Type Transistors NPN Transistors PBSS4350T (KBSS4350T) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 High collector current capability High collector current gain Improved efficiency due to reduced heat generation. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Low collector-emitter saturation voltage VCEsat and +0.1 1.9 -0.1 3 corresponding low RC