PBSS4330X Todos los transistores

 

PBSS4330X . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS4330X
   Código: *1R
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.55 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 30 pF
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: SOT89
     - Selección de transistores por parámetros

 

PBSS4330X Datasheet (PDF)

 ..1. Size:101K  nxp
 pbss4330x.pdf pdf_icon

PBSS4330X

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PBSS4330X30 V, 3 ANPN low VCEsat (BISS) transistorProduct specification 2004 Dec 06Supersedes data of 2003 Nov 28Philips Semiconductors Product specification30 V, 3 APBSS4330XNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitte

 6.1. Size:156K  philips
 pbss4330pa.pdf pdf_icon

PBSS4330X

PBSS4330PA30 V, 3 A NPN low VCEsat (BISS) transistorRev. 01 19 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.PNP complement: PBSS5330PA.1.2 Features and benefits

 6.2. Size:702K  nxp
 pbss4330pa.pdf pdf_icon

PBSS4330X

PBSS4330PA30 V, 3 A NPN low VCEsat (BISS) transistor7 April 2015 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in anultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package withmedium power capability.PNP complement: PBSS5330PA.2. Features and benefits Low collector-emitter saturatio

 6.3. Size:246K  nxp
 pbss4330pas.pdf pdf_icon

PBSS4330X

PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor11 September 2014 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultrathin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plasticpackage with medium power capability and visible and soldarable side pads.PNP complement: PBSS5330PAS2. F

MOSTRAR MÁS

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2SC5079 | CSC2003 | 2SC4959 | P609 | 2SC505 | DMA30401 | 2CY17

 

 
Back to Top

 


 
.