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PBSS4350D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS4350D
   Código: 43
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.6 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 30 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT457 SC74
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PBSS4350D Datasheet (PDF)

 ..1. Size:290K  philips
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PBSS4350D

DISCRETE SEMICONDUCTORS DATA SHEETfpageM3D302PBSS4350D50 V low VCEsat NPN transistorProduct data sheet 2001 Jul 13Supersedes data of 2001 Jan 26NXP Semiconductors Product data sheet50 V low VCEsat NPN transistorPBSS4350DFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO collector-emit

 ..2. Size:76K  philips
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PBSS4350D

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D302PBSS4350DNPN transistorProduct specification 2000 Mar 08Philips Semiconductors Product specificationNPN transistor PBSS4350DFEATURES PINNING High current capabilitiesPIN DESCRIPTION Low VCEsat.1 collector2 collectorAPPLICATIONS3 base Heavy duty battery powered equipment (Automotive, 4 emitterT

 ..3. Size:498K  nxp
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PBSS4350D

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:127K  philips
pbss4350x.pdf pdf_icon

PBSS4350D

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PBSS4350X50 V, 3 ANPN low VCEsat (BISS) transistorProduct specification 2004 Nov 04Supersedes data of 2003 Nov 21Philips Semiconductors Product specification50 V, 3 APBSS4350XNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitte

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 182T2 | CSC2003 | P609 | 2SC4959 | 185T2 | 2SD673 | DDTB143TU

 

 
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