PBSS4350SPN Datasheet. Equivalente

 ..1. Size:122K  nxp
 pbss4350spn.pdf

PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Rev. 01 5 April 2007 Product data sheet 1. Product profile 1.1 General description NPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP Name PBSS4350

 5.1. Size:89K  nxp
 pbss4350ss.pdf

PBSS4350SS 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor Rev. 01 3 April 2007 Product data sheet 1. Product profile 1.1 General description NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/PNP PNP/PNP complement complement NXP Name PBSS4350S

 6.1. Size:290K  philips
 pbss4350d.pdf

DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D302 PBSS4350D 50 V low VCEsat NPN transistor Product data sheet 2001 Jul 13 Supersedes data of 2001 Jan 26 NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350D FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO collector-emit

 6.2. Size:127K  philips
 pbss4350x.pdf

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat (BISS) transistor Product specification 2004 Nov 04 Supersedes data of 2003 Nov 21 Philips Semiconductors Product specification 50 V, 3 A PBSS4350X NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitte

 6.3. Size:155K  philips
 pbss4350z.pdf

DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D087 PBSS4350Z 50 V low VCEsat NPN transistor Product data sheet 2003 May 13 Supersedes data of 2003 Jan 20 NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350Z FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High collector current capability

 6.4. Size:76K  philips
 pbss4350d 1.pdf

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS4350D NPN transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification NPN transistor PBSS4350D FEATURES PINNING High current capabilities PIN DESCRIPTION Low VCEsat. 1 collector 2 collector APPLICATIONS 3 base Heavy duty battery powered equipment (Automotive, 4 emitter T

 6.5. Size:338K  philips
 pbss4350t.pdf

DISCRETE SEMICONDUCTORS DATA SHEET PBSS4350T 50 V; 3 A NPN low VCEsat (BISS) transistor Product data sheet 2004 Jan 09 Supersedes data of 2002 Aug 08 NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat PBSS4350T (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNIT corresponding low RCEs

 6.6. Size:498K  nxp
 pbss4350d.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.7. Size:241K  nxp
 pbss4350x.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.8. Size:155K  nxp
 pbss4350z.pdf

DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D087 PBSS4350Z 50 V low VCEsat NPN transistor Product data sheet 2003 May 13 Supersedes data of 2003 Jan 20 NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350Z FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High collector current capability

 6.9. Size:573K  nxp
 pbss4350t.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.10. Size:1663K  kexin
 pbss4350t.pdf

SMD Type Transistors NPN Transistors PBSS4350T (KBSS4350T) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 High collector current capability High collector current gain Improved efficiency due to reduced heat generation. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Low collector-emitter saturation voltage VCEsat and +0.1 1.9 -0.1 3 corresponding low RC