PBSS4350T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4350T  📄📄 

Código: ZC*

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 25 pF

Ganancia de corriente contínua (hFE): 300

Encapsulados: SOT23

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PBSS4350T datasheet

 ..1. Size:338K  philips
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PBSS4350T

DISCRETE SEMICONDUCTORS DATA SHEET PBSS4350T 50 V; 3 A NPN low VCEsat (BISS) transistor Product data sheet 2004 Jan 09 Supersedes data of 2002 Aug 08 NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat PBSS4350T (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNIT corresponding low RCEs

 ..2. Size:573K  nxp
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PBSS4350T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 ..3. Size:1663K  kexin
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PBSS4350T

SMD Type Transistors NPN Transistors PBSS4350T (KBSS4350T) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 High collector current capability High collector current gain Improved efficiency due to reduced heat generation. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Low collector-emitter saturation voltage VCEsat and +0.1 1.9 -0.1 3 corresponding low RC

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PBSS4350T

DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D302 PBSS4350D 50 V low VCEsat NPN transistor Product data sheet 2001 Jul 13 Supersedes data of 2001 Jan 26 NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350D FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO collector-emit

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