PBSS4420D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PBSS4420D20 V, 4 A NPN low VCEsat (BISS) transistorRev. 02 24 September 2008 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a smallSOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS5420D.1.2 Features Very low collector-emitter saturation resistance Ultra low collect

DISCRETE SEMICONDUCTORS DATA SHEETbook, halfpageM3D109PBSS4480X80 V, 4 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 Oct 25Supersedes data of 2004 Aug 5NXP Semiconductors Product data sheet80 V, 4 A PBSS4480XNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA High hFE and low VCEsat at high current operationSYMBOL PARAMETER MAX. UNIT

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS4440D40 V NPN low VCEsat (BISS) transistorRev. 01 21 April 2005 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74)SMD plastic package.PNP complement: PBSS5440D.1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector current capability IC (DC)