PBSS4612PA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4612PA  📄📄 

Código: A5

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 12 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 50 MHz

Capacitancia de salida (Cc): 95 pF

Ganancia de corriente contínua (hFE): 280

Encapsulados: SOT1061

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PBSS4612PA datasheet

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PBSS4612PA

PBSS4612PA 12 V, 6 A NPN low VCEsat (BISS) transistor Rev. 01 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5612PA. 1.2 Features and benefits

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PBSS4612PA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.1. Size:167K  philips
 pbss4620pa.pdf pdf_icon

PBSS4612PA

PBSS4620PA 20 V, 6 A NPN low VCEsat (BISS) transistor Rev. 01 18 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5620PA. 1.2 Features and benefits

 8.2. Size:167K  philips
 pbss4630pa.pdf pdf_icon

PBSS4612PA

PBSS4630PA 30 V, 6 A NPN low VCEsat (BISS) transistor Rev. 01 6 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5630PA. 1.2 Features and benefits

MOSTRAR MÁS

Otros transistores... PBSS4420D, PBSS4440D, PBSS4480X, PBSS4520X, PBSS4540X, PBSS4540Z, PBSS4560PA, PBSS4580PA, BD335, PBSS4620PA, PBSS4630PA, PBSS5120T, PBSS5130T, PBSS5140T, PBSS5140U, PBSS5140V, PBSS5160DS