PBSS5240T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS5240T
Código: ZF*
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 28 pF
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar PBSS5240T
PBSS5240T Datasheet (PDF)
pbss5240t.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPBSS5240T40 V, 2 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Jan 15Supersedes data of 2001 Oct 31NXP Semiconductors Product data sheet40 V, 2 A PBSS5240TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO c
pbss5240t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5240x.pdf
PBSS5240X40 V, 2 A PNP low VCEsat (BISS) transistor19 October 2012 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power andflat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement:PBSS4240X.1.2 Features and benefits Low collector-emitter saturation voltage VCEsat H
pbss5240v.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5240z.pdf
PBSS5240Z40 V, 2 A PNP low VCEsat (BISS) transistor15 October 2014 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium powerSOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4240Z2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capabi
pbss5240y.pdf
DISCRETE SEMICONDUCTORS DATA SHEETfpageMBD128PBSS5240Y40 V low VCEsat PNP transistorProduct data sheet 2002 Feb 28Supersedes data of 2001 Oct 24NXP Semiconductors Product data sheet40 V low VCEsat PNP transistorPBSS5240YFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO collector-emit
pbss5240v.pdf
SMD Type TransistorsPNP TransistorsPBSS5240V (KBSS5240V) SOT523-6(SOT666) Features4 Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM53 High collector current gain (hFE) at high IC6 2 High efficiency leading to reduced heat generation1.collector2.collector Reduced printed-circuit board area requireme
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
