PBSS5330X . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS5330X
Código: *1S
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.55 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 45 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de transistor bipolar PBSS5330X
PBSS5330X Datasheet (PDF)
pbss5330x.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5330X30 V, 3 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 03Supersedes data of 2003 Nov 28NXP Semiconductors Product data sheet30 V, 3 A PBSS5330XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitter sat
pbss5330x.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5330pa.pdf
PBSS5330PA30 V, 3 A PNP low VCEsat (BISS) transistorRev. 01 19 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.NPN complement: PBSS4330PA.1.2 Features and benefits
pbss5330pas.pdf
PBSS5330PAS30 V, 3 A PNP low VCEsat (BISS) transistor11 September 2014 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultrathin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plasticpackage with medium power capability and visible and soldarable side pads.NPN complement: PBSS4330PAS2. F
pbss5330pa.pdf
PBSS5330PA30 V, 3 A PNP low VCEsat (BISS) transistor7 April 2015 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in anultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package withmedium power capability.NPN complement: PBSS4330PA.2. Features and benefits Low collector-emitter saturatio
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