PBSS5350Z . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS5350Z
Código: PB5350
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.35 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 40 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de transistor bipolar PBSS5350Z
PBSS5350Z Datasheet (PDF)
pbss5350z.pdf
DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageM3D087PBSS5350Z50 V low VCEsat PNP transistorProduct data sheet 2003 May 13Supersedes data of 2003 Jan 20NXP Semiconductors Product data sheet50 V low VCEsat PNP transistorPBSS5350ZFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High collector current capabili
pbss5350t.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPBSS5350T50 V, 3 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Jan 13Supersedes data of 2002 Aug 08NXP Semiconductors Product data sheet50 V, 3 A PBSS5350TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNITcorresponding low RCEsa
pbss5350x.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5350X50 V, 3 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 04Supersedes data of 2003 Nov 21NXP Semiconductors Product data sheet50 V, 3 A PBSS5350XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitter sat
pbss5350d 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D302PBSS5350DPNP transistorProduct specification 2000 Mar 08Philips Semiconductors Product specificationPNP transistor PBSS5350DFEATURES PINNING High current capabilitiesPIN DESCRIPTION Low VCEsat.1 collector2 collectorAPPLICATIONS3 base Heavy duty battery powered equipment (Automotive, 4 emitterT
pbss5350d.pdf
PBSS5350D50 V, 3 A PNP low VCEsat (BISS) transistorRev. 6 28 June 2011 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D1.2 Features and benefits Low collector-emitter saturation AEC-Q101 qualified
pbss5350ss.pdf
PBSS5350SS50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistorRev. 01 3 April 2007 Product data sheet1. Product profile1.1 General descriptionPNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a mediumpower Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/PNP NPN/NPNcomplement complementNXP NamePBSS5350S
pbss5350t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5350x.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5350th.pdf
PBSS5350TH50 V, 3 A PNP low VCEsat (BISS) transistor21 June 2017 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package.2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collect
pbss5350d.pdf
PBSS5350D50 V, 3 A PNP low VCEsat (BISS) transistorRev. 6 28 June 2011 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D1.2 Features and benefits Low collector-emitter saturation AEC-Q101 qualified
pbss5350t.pdf
SMD Type TransistorsPNP TransistorsPBSS5350T (KBSS5350T)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High collector current capability High collector current gain1 2 Improved efficiency due to reduced heat generation.+0.1+0.050.95-0.1 0.1-0.01 Low collector-emitter saturation voltage VCEsat and+0.11.9-0.1 corresponding low RCEsat
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