PBSS5560PA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS5560PA 📄📄
Código: AC
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 55 MHz
Capacitancia de salida (Cc): 80 pF
Ganancia de corriente contínua (hFE): 180
Encapsulados: SOT1061
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PBSS5560PA datasheet
..1. Size:166K philips
pbss5560pa.pdf 
PBSS5560PA 60 V, 5 A PNP low VCEsat (BISS) transistor Rev. 01 21 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4560PA. 1.2 Features and benefits
..2. Size:283K nxp
pbss5560pa.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
8.2. Size:166K philips
pbss5580pa.pdf
PBSS5580PA 80 V, 4 A PNP low VCEsat (BISS) transistor Rev. 01 6 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4580PA. 1.2 Features and benefits
8.3. Size:193K philips
pbss5540x.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Nov 04 Supersedes data of 2004 Jan 15 NXP Semiconductors Product data sheet 40 V, 5 A PBSS5540X PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT
8.4. Size:144K philips
pbss5540z.pdf
DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D087 PBSS5540Z 40 V low VCEsat PNP transistor Product data sheet 2001 Sep 21 Supersedes data of 2001 Jan 26 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX UNIT High current capability VCEO emitter-collect
8.5. Size:67K philips
pbss5540z 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5540Z PNP Transistor Product specification 2000 Oct 25 Supersedes data of 1999 Aug 04 Philips Semiconductors Product specification PNP Transistor PBSS5540Z FEATURES PINNING Low VCEsat PIN DESCRIPTION High current capabilities. 1 base 2 collector APPLICATIONS 3 emitter Heavy duty battery powered equip
8.6. Size:441K nxp
pbss5520x.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
8.7. Size:193K nxp
pbss5540x.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Nov 04 Supersedes data of 2004 Jan 15 NXP Semiconductors Product data sheet 40 V, 5 A PBSS5540X PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT
8.8. Size:144K nxp
pbss5540z.pdf
DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D087 PBSS5540Z 40 V low VCEsat PNP transistor Product data sheet 2001 Sep 21 Supersedes data of 2001 Jan 26 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX UNIT High current capability VCEO emitter-collect
8.9. Size:1412K kexin
pbss5540z-89.pdf
SMD Type Transistors PNP Transistors PBSS5540Z (KBSS5540Z) 1.70 0.1 Features Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation. 0.42 0.1 0.46 0.1 2 1 1.Base 2.Collector 3 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40
8.10. Size:1554K kexin
pbss5540z.pdf
SMD Type Transistors PNP Transistors PBSS5540Z (KBSS5540Z) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation. 1 2 3 2, 4 0.250 2.30 (typ) Gauge Plane 1 1.Base 2.Collector 0.70 0.1 3 3.Emitter 4.60 (typ) 4.Collector Absolute M
Otros transistores... PBSS5350X, PBSS5350Z, PBSS5420D, PBSS5440D, PBSS5480X, PBSS5520X, PBSS5540X, PBSS5540Z, 2SA1015, PBSS5580PA, PBSS5612PA, PBSS5620PA, PBSS5630PA, PBSS8110D, PBSS8110T, PBSS8110X, PBSS8110Y
