PBSS8110Z Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS8110Z  📄📄 

Código: PB8110

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.65 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 7.5 pF

Ganancia de corriente contínua (hFE): 150

Encapsulados: SOT223

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PBSS8110Z datasheet

 ..1. Size:137K  nxp
 pbss8110z.pdf pdf_icon

PBSS8110Z

PBSS8110Z 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 8 January 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS9110Z. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector curre

 6.1. Size:150K  nxp
 pbss8110d.pdf pdf_icon

PBSS8110Z

PBSS8110D 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a plastic SOT457 (SC-74) package. 1.2 Features SOT457 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, leading to less heat generation 1.3

 6.2. Size:135K  nxp
 pbss8110x.pdf pdf_icon

PBSS8110Z

PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 11 May 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement PBSS9110X. 1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capabili

 6.3. Size:123K  nxp
 pbss8110t.pdf pdf_icon

PBSS8110Z

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat (BISS) transistor Product specification 2003 Dec 22 Supersedes data of 2003 Jul 28 Philips Semiconductors Product specification 100 V, 1 A PBSS8110T NPN low VCEsat (BISS) transistor QUICK REFERENCE DATA FEATURES SYMBOL PARAMETER MAX. UNIT SOT23 package VCEO collector-emitter voltag

MOSTRAR MÁS

Otros transistores... PBSS5580PA, PBSS5612PA, PBSS5620PA, PBSS5630PA, PBSS8110D, PBSS8110T, PBSS8110X, PBSS8110Y, 2SC828, PBSS8510PA, PBSS9110D, PBSS9110T, PBSS9110X, PBSS9110Y, PBSS9110Z, PBSS9410PA, PDTA113EE