PDTA115TM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PDTA115TM
   Código: E8_EB
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 100000 kOhm

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT883

Búsqueda de reemplazo de transistor bipolar PDTA115TM

PDTA115TM Datasheet (PDF)

0.1. Size:610K nxp
pdta115tmb.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

6.1. Size:102K philips
pdta115t ser.pdf

PDTA115T seriesPNP resistor-equipped transistors; R1 = 100 k, R2 = openRev. 05 2 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP resistor-equipped transistors.Table 1. Product overviewType number Package NPN complementNXP JEITAPDTA115TE SOT416 SC-75 PDTC115TEPDTA115TK SOT346 SC-59 PDTC115TKPDTA115TM SOT883 SC-101 PDTC115TMPDTA115TS[1]

6.2. Size:102K nxp
pdta115tk pdta115ts.pdf