PDTA143ZM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PDTA143ZM
Código: DP
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT883
Búsqueda de reemplazo de transistor bipolar PDTA143ZM
PDTA143ZM Datasheet (PDF)
pdta143zk 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA143ZKPNP resistor-equipped transistorProduct specification 1999 May 25Supersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ZKFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 4.7 k and 47 kPIN DESCRIPTIONrespectively)1 base/input
pdta143zt 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ZTPNP resistor-equipped transistorProduct specification 1999 May 25Supersedes data of 1998 May 19Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ZTFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 4.7 k and 47 kPIN DESCRIPTIONrespectively)1 base/input
pdta143zt 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ZTPNP resistor-equipped transistorProduct specification 1997 Dec 12File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ZTFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k and 47 k3handbook, 4 columnsrespectively)3
pdta143zk 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA143ZKPNP resistor-equipped transistorProduct specification 1999 May 25Supersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ZKFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 4.7 k and 47 kPIN DESCRIPTIONrespectively)1 base/input
pdta143z series.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTA143Z seriesPNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 kProduct data sheet 2004 Aug 05Supersedes data of 2003 Sep 08NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA143Z seriesR1 = 4.7 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
pdta143zt 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ZTPNP resistor-equipped transistorProduct specification 1999 May 25Supersedes data of 1998 May 19Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ZTFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 4.7 k and 47 kPIN DESCRIPTIONrespectively)1 base/input
pdta143zt 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ZTPNP resistor-equipped transistorProduct specification 1997 Dec 12File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ZTFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k and 47 k3handbook, 4 columnsrespectively)3
pdta143xqa pdta123jqa pdta143zqa pdta114yqa.pdf
PDTA143X/123J/143Z/114YQA series50 V, 100 mA PNP resistor-equipped transistorsRev. 1 30 October 2015 Product data sheet1. Product profile1.1 General description100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType
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