PDTC114EU Todos los transistores

 

PDTC114EU . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDTC114EU
   Código: p09_t09_t16_W09
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 2.5 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SOT323
 

 Búsqueda de reemplazo de PDTC114EU

   - Selección ⓘ de transistores por parámetros

 

PDTC114EU Datasheet (PDF)

 ..1. Size:58K  motorola
 pdtc114eu 4.pdf pdf_icon

PDTC114EU

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114EUNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EUFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handbook, 4 columns Simplification of circuit design

 ..2. Size:58K  philips
 pdtc114eu 4.pdf pdf_icon

PDTC114EU

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114EUNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EUFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handbook, 4 columns Simplification of circuit design

 6.1. Size:56K  motorola
 pdtc114et 7.pdf pdf_icon

PDTC114EU

DISCRETE SEMICONDUCTORSDATA SHEEThalfpageM3D088PDTC114ETNPN resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3dbook, 4 columns3 Simplification of circuit designR1

 6.2. Size:56K  motorola
 pdtc114ee 4.pdf pdf_icon

PDTC114EU

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114EENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k each)PIN DESCRIPTION Simplification of circuit design1 base/input

MOSTRAR MÁS

Otros transistores... PDTB113ET , PDTB113ZT , PDTB123ET , PDTB123TT , PDTB123YT , PDTC114EE , PDTC114EM , PDTC114ET , 2SC5198 , PDTC114TE , PDTC114TM , PDTC114TT , PDTC114TU , PDTC114YE , PDTC114YM , PDTC114YT , PDTC114YU .

History: NB122FJ

 

 
Back to Top

 


 
.