PDTC114YT Todos los transistores

 

PDTC114YT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDTC114YT
   Código: *27_p27_t27_W27
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 2.5 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT23
 

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PDTC114YT datasheet

 ..1. Size:56K  motorola
 pdtc114yt 3.pdf pdf_icon

PDTC114YT

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC114YT NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YT FEATURES Built-in bias resistors R1 and R2 (typ. 10 and 47 k respectively) Simplification of circuit design 3 Re

 ..2. Size:56K  philips
 pdtc114yt 3.pdf pdf_icon

PDTC114YT

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC114YT NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YT FEATURES Built-in bias resistors R1 and R2 (typ. 10 and 47 k respectively) Simplification of circuit design 3 Re

 6.1. Size:59K  motorola
 pdtc114yu 1.pdf pdf_icon

PDTC114YT

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114YU NPN resistor-equipped transistor 1999 Apr 20 Product specification Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YU FEATURES Built-in bias resistors R1 and R2 (typ. 10 k and 47 k respectively) 3 handbook, 4 columns 3 Simplification of circuit design R1 R

 6.2. Size:56K  motorola
 pdtc114ye 3.pdf pdf_icon

PDTC114YT

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114YE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE FEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k and 47 k PIN DESCRIPTION respectively) 1 base/input Simplification

MOSTRAR MÁS

Otros transistores... PDTC114ET , PDTC114EU , PDTC114TE , PDTC114TM , PDTC114TT , PDTC114TU , PDTC114YE , PDTC114YM , BD333 , PDTC114YU , PDTC115EE , PDTC115EM , PDTC115ET , PDTC115EU , PDTC115TE , PDTC115TM , PDTC115TT .

 

 

 


 
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