PDTC124XM Todos los transistores

 

PDTC124XM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDTC124XM
   Código: DZ
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 22 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 2.5 pF
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT883
 

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PDTC124XM Datasheet (PDF)

 6.1. Size:54K  motorola
 pdtc124xef 2.pdf pdf_icon

PDTC124XM

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC124XEFNPN resistor-equipped transistor1999 May 18Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC124XEFFEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively)3ha

 6.2. Size:55K  motorola
 pdtc124xe 3.pdf pdf_icon

PDTC124XM

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124XENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Sep 21Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124XEFEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively) Simplification of circuit designhandbook, halfpage

 6.3. Size:54K  philips
 pdtc124xef 2.pdf pdf_icon

PDTC124XM

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC124XEFNPN resistor-equipped transistor1999 May 18Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC124XEFFEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively)3ha

 6.4. Size:55K  philips
 pdtc124xe 3.pdf pdf_icon

PDTC124XM

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124XENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Sep 21Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124XEFEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively) Simplification of circuit designhandbook, halfpage

MOSTRAR MÁS

Otros transistores... PDTC124EM , PDTC124ET , PDTC124EU , PDTC124TE , PDTC124TM , PDTC124TT , PDTC124TU , PDTC124XE , A733 , PDTC124XT , PDTC124XU , PDTC143EE , PDTC143EM , PDTC143ET , PDTC143EU , PDTC143TE , PDTC143TM .

History: BC192 | KSB744R | BU2725DX | 2SA1036KFRA | 2SC3356S-B

 

 
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