2N565 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N565
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.3 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.4 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO5
Búsqueda de reemplazo de transistor bipolar 2N565
2N565 Datasheet (PDF)
2n5655-57 2n5655 2n5656 2n5657.pdf
Order this documentMOTOROLAby 2N5655/DSEMICONDUCTOR TECHNICAL DATA2N56552N5656Plastic NPN Silicon2N5657High-Voltage Power Transistor. . . designed for use in lineoperated equipment such as audio output amplifiers;lowcurrent, highvoltage converters; and AC line relays. 0.5 AMPEREPOWER TRANSISTORS Excellent DC Current Gain hFE = 30250 @ IC = 100 mAdcNP
2n5657.pdf
2N5657SILICON NPN TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPNtransistor in Jedec SOT-32 plastic package. It isintended for use output amplifiers, low current,high voltage converters and AC line relays.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Un
2n5655g.pdf
2N5655G, 2N5657GPlastic NPN SiliconHigh-Voltage PowerTransistorsThese devices are designed for use in line-operated equipment suchas audio output amplifiers; low-current, high-voltage converters; andhttp://onsemi.comAC line relays.0.5 AMPEREFeaturesPOWER TRANSISTORS Excellent DC Current GainNPN SILICON High Current-Gain - Bandwidth Product250-350 VOLTS, 20 WATT
2n5655 2n5657.pdf
2N5655, 2N5657Plastic NPN SiliconHigh-Voltage PowerTransistorThese devices are designed for use in line-operated equipment suchas audio output amplifiers; low-current, high-voltage converters; andhttp://onsemi.comAC line relays.0.5 AMPEREFeaturesPOWER TRANSISTORS Excellent DC Current Gain -NPN SILICONhFE = 30-250 @ IC = 100 mAdc250-350 VOLTS, 20 WATTS Current
2n5657g.pdf
2N5655, 2N5657Plastic NPN SiliconHigh-Voltage PowerTransistorThese devices are designed for use in line-operated equipment suchas audio output amplifiers; low-current, high-voltage converters; andhttp://onsemi.comAC line relays.0.5 AMPEREFeaturesPOWER TRANSISTORS Excellent DC Current Gain -NPN SILICONhFE = 30-250 @ IC = 100 mAdc250-350 VOLTS, 20 WATTS Current
2n5655g 2n5657g.pdf
2N5655G, 2N5657GPlastic NPN SiliconHigh-Voltage PowerTransistorsThese devices are designed for use in line-operated equipment suchas audio output amplifiers; low-current, high-voltage converters; andhttp://onsemi.comAC line relays.0.5 AMPEREFeaturesPOWER TRANSISTORS Excellent DC Current GainNPN SILICON High Current-Gain - Bandwidth Product250-350 VOLTS, 20 WATT
2n5655 2n5656 2n5657.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5655 2N5656 2N5657 DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Bas
2n5657.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5657 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) DC Current Gain- : hFE= 30-250@IC= 0.1A Low Saturation Voltage APPLICATIONS Designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and AC
2n5655 2n5656 2n5657.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5655 2N5656 2N5657 DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting bas
2n5656.pdf
isc Silicon NPN Power Transistors 2N5656DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)Low Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in line-operated equipment such as audiooutput amplifiers; low-current, high-voltage converters; and
2n5655.pdf
isc Silicon NPN Power Transistors 2N5655DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)DC Current Gain-: h = 30-250@I = 0.1AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated equipment such as audiooutput amplifiers; low-current, high-
Otros transistores... 2N5637 , 2N564 , 2N5641 , 2N5642 , 2N5643 , 2N5644 , 2N5645 , 2N5646 , BD135 , 2N5650 , 2N5651 , 2N5652 , 2N5655 , 2N5656 , 2N5657 , 2N5658 , 2N5659 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050