2N5663
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5663
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15
W
Tensión colector-base (Vcb): 400
V
Tensión colector-emisor (Vce): 300
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 1
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20
MHz
Capacitancia de salida (Cc): 60
pF
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta:
TO5
2N5663
Datasheet (PDF)
..1. Size:59K microsemi
2n5660 2n5661 2n5662 2n5663.pdf 
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices Qualified Level JAN, JANTX 2N5660 2N5661 2N5662 2N5663 JANTXV MAXIMUM RATINGS 2N5660 2N5661 Ratings Symbol Unit 2N5662 2N5663 Collector-Emitter Voltage 200 300 Vdc VCEO Collector-Base Voltage 250 400 Vdc VCBO Collector-Emitter Voltage 250 400 Vdc VCER Emitter-Base Voltage 6.0
9.1. Size:341K semelab
2n5665n1.pdf
NPN POWER SILICON SWITCHING TRANSISTOR 2N5665N1 Hermetic SMD0.5 Ceramic Surface Mount. Ideally Suited for Power Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 400V VCEO Collector Emitter Voltage 300V VEBO Emitter Base Voltage 6V IC Cont
9.2. Size:341K semelab
2n5667n1.pdf
NPN POWER SILICON SWITCHING TRANSISTOR 2N5667N1 Hermetic SMD0.5 Ceramic Surface Mount. Ideally Suited for Power Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 400V VCEO Collector Emitter Voltage 300V VEBO Emitter Base Voltage 6V IC Cont
9.3. Size:10K semelab
2n5665smd.pdf
2N5665SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 300V IC = 3A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (
9.4. Size:10K semelab
2n5664smd05.pdf
2N5664SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 200V IC = 3A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab her
9.5. Size:10K semelab
2n5666smd05.pdf
2N5666SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 200V IC = 3A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab her
9.6. Size:10K semelab
2n5666smd.pdf
2N5666SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 200V IC = 3A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (
9.7. Size:17K semelab
2n5664smd.pdf
2N5664SMDSEMELABMECHANICAL DATADimensions in mm (inches)NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNTPACKAGE FORHIGH REL APPLICATIONS FEATURES ! HIGH VOLTAGE FAST SWITCHING CERAMIC SURFACE MOUNT PACKAGE SCREENING OPTIONS AVAILABLE
9.8. Size:116K microsemi
2n5666u3.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 DEVICES LEVELS 2N5664 2N5666 2N5667 JAN2N5665 2N5666S 2N5667S JANTX2N5666U3 JANTVJANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) 2N5664 2N5
9.9. Size:116K microsemi
2n5666s.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 DEVICES LEVELS 2N5664 2N5666 2N5667 JAN2N5665 2N5666S 2N5667S JANTX2N5666U3 JANTVJANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) 2N5664 2N5
9.10. Size:275K microsemi
2n5661u3.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 DEVICES LEVELS 2N5660 2N5661 2N5662 JAN2N5660U3 2N5661U3 2N5663 JANTXJANT
9.11. Size:116K microsemi
2n5667s.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 DEVICES LEVELS 2N5664 2N5666 2N5667 JAN2N5665 2N5666S 2N5667S JANTX2N5666U3 JANTVJANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) 2N5664 2N5
9.12. Size:60K microsemi
2n5664-65-66-67.pdf
TECHNICAL DATA NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 Devices Qualified Level Devices Qualified Level JAN JAN 2N5666 2N5667 JANTX 2N5664 2N5665 JANTX 2N5666S 2N5667S JANTXV JANTXV JANS MAXIMUM RATINGS 2N5664 2N5665 Ratings Symbol 2N5666, S 2N5667, S Unit Collector-Emitter Voltage 200 300 Vdc VCEO TO-66* (TO-213AA) Collector-Ba
9.13. Size:275K microsemi
2n5660u3.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 DEVICES LEVELS 2N5660 2N5661 2N5662 JAN2N5660U3 2N5661U3 2N5663 JANTXJANT
9.14. Size:127K inchange semiconductor
2n5664 2n5665.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5664 2N5665 DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Em
9.15. Size:221K inchange semiconductor
2n5665.pdf
isc Silicon NPN Power Transistor 2N5665DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =300V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 400 VCBOV Collector-Emitter Voltage 30
9.16. Size:127K inchange semiconductor
2n5660 2n5661.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5660 2N5661 DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Em
9.17. Size:221K inchange semiconductor
2n5661.pdf
isc Silicon NPN Power Transistor 2N5661DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =300V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 400 VCBOV Collector-Emitter Voltage 30
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