2N5664SM Todos los transistores

 0.1. Size:10K  semelab
 2n5664smd05.pdf

2N5664SMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 200V IC = 3A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab her

 0.2. Size:17K  semelab
 2n5664smd.pdf

2N5664SMD SEME LAB MECHANICAL DATA Dimensions in mm (inches) NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS FEATURES ! HIGH VOLTAGE FAST SWITCHING CERAMIC SURFACE MOUNT PACKAGE SCREENING OPTIONS AVAILABLE

 8.1. Size:60K  microsemi
 2n5664-65-66-67.pdf

TECHNICAL DATA NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 Devices Qualified Level Devices Qualified Level JAN JAN 2N5666 2N5667 JANTX 2N5664 2N5665 JANTX 2N5666S 2N5667S JANTXV JANTXV JANS MAXIMUM RATINGS 2N5664 2N5665 Ratings Symbol 2N5666, S 2N5667, S Unit Collector-Emitter Voltage 200 300 Vdc VCEO TO-66* (TO-213AA) Collector-Ba

 8.2. Size:127K  inchange semiconductor
 2n5664 2n5665.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5664 2N5665 DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Em