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2STA1694 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2STA1694
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 20 MHz
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: TO3P
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2STA1694 Datasheet (PDF)

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 2sta1694.pdf pdf_icon

2STA1694

2STA1694High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC321ApplicationsTO-3P Audio power amplifierDescriptionFigure 1. Internal schematic diagramThe device is a PNP transistor manufactured using new Bi

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 2sta1695.pdf pdf_icon

2STA1694

2STA1695High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -140 V Complementary to 2STC4468 Typical ft = 20 MHz Fully characterized at 125 oC32Applications1 Audio power amplifierTO-3PDescriptionFigure 1. Internal schematic diagramThe device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor f

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 2sta1837.pdf pdf_icon

2STA1694

2STA1837PNP power bipolar transistorPreliminary dataFeatures High breakdown voltage VCEO = -230 V Complementary to 2STC4793 High transition frequency, typical fT = 70 MHzApplications3 Audio power amplifier 21 Drive stage amplifierTO-220FPDescriptionThis device is a PNP transistor manufactured using new PB-HDC (power bipolar high density Figur

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 2sta1943.pdf pdf_icon

2STA1694

2STA1943High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO > -230V Complementary to 2STC5200 Fast-switching speed Typical fT = 30 MHzApplication321 Audio power amplifierTO-264DescriptionThis device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resultin

MOSTRAR MÁS

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: ED1402 | SS200 | 2SB70 | CJF44H11 | K2121B | GT124V | BTD1768BA3

 

 
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