2STR1230 Todos los transistores

 

2STR1230 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2STR1230
   Código: 130
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 5 pF
   Ganancia de corriente contínua (hfe): 180
   Paquete / Cubierta: SOT23
 

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2STR1230 Datasheet (PDF)

 ..1. Size:174K  st
 2str1230.pdf pdf_icon

2STR1230

2STR1230Low voltage fast-switching NPN power transistorFeatures Very low collector-emitter saturation voltage3 High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface 2mounting circuits1ApplicationsSOT-23 LED Motherboard & hard disk drive Mobile equipmentFigure 1. Internal schematic diagram DC-D

 8.1. Size:203K  st
 2str1215.pdf pdf_icon

2STR1230

2STR1215Low voltage fast-switching NPN power transistorDatasheet - production dataFeatures Very low collector-emitter saturation voltage3 High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface 2mounting circuits1ApplicationsSOT-23 LED Battery charger Voltage and relay driveFigure 1. Internal schem

 9.1. Size:248K  st
 2str1160.pdf pdf_icon

2STR1230

2STR1160Low voltage fast-switching NPN power transistorFeatures Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface mounting circuitsDescriptionSOT-23The device in a NPN transistor manufactured using new PB-HCD (Power Bipolar High Current Density) technology. Th

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