BUL704 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUL704
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar BUL704
BUL704 Datasheet (PDF)
bul704.pdf
BUL704High voltage fast-switching NPN Power TransistorGeneral features NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed3 In compliance with the 2002/93/EC European 21DirectiveTO-220DescriptionThe device is manufactured using high voltageMulti-Epitax
bul705.pdf
BUL705High voltage fast-switching NPN Power TransistorGeneral features NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed3 Fully characterized at 125 C21 In compliance with the 2002/93/EC European TO-220DirectiveDescriptionThe device is manufactu
bul70a.pdf
BUL70ASEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE0.320.24HIGH SPEED NPNSILICON POWER TRANSISTOR0.100.021613max.Designed for use in 1.70electronic ballast applicationsmax.10max. SEMEFAB DESIGNED AND DIFFUSED DIE6.76.33.1 HIGH VOLTAGE2.9 FAST SWITCHING4 HIGH ENERGY RATING3.7 7.3
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
