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BUL7216 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUL7216

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 1600 V

Tensión colector-emisor (Vce): 700 V

Tensión emisor-base (Veb): 12 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 16

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar BUL7216

 

BUL7216 Datasheet (PDF)

1.1. bulb7216 bul7216.pdf Size:200K _st

BUL7216
BUL7216

BULB7216 BUL7216 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation 3 2 3 1 Very high switching speed 2 1 I2PAK TO-220 Applications Electronic ballast for fluorescent lighting (277 V 3 1 push-pull and 347 V half bridge topoligies) D2PAK Description The

5.1. bul72a.pdf Size:14K _semelab

BUL7216
BUL7216

BUL72A SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE 0.32 0.24 HIGH SPEED NPN SILICON POWER TRANSISTOR 0.10 0.02 16° 13° max. Designed for use in 1.70 electronic ballast applications max. 10° max. • SEMEFAB DESIGNED AND DIFFUSED DIE 6.7 6.3 3.1 • HIGH VOLTAGE 2.9 • FAST SWITCHING 4 • HIGH ENERGY RATING 3.7 7.3

5.2. bul72b lcc4.pdf Size:16K _semelab

BUL7216
BUL7216

BUL72B - LCC4 SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 17 • SEMEFAB DESIGNED AND DIFFUSED DIE 10 18 7.62 (0.300) 7.12 (0.280) 9 1 • HIGH VOLTAGE 0.76 (0.030) 8 2 0.51

 5.3. bul72b.pdf Size:14K _semelab

BUL7216
BUL7216

BUL72B SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE 0.32 0.24 HIGH SPEED NPN SILICON POWER TRANSISTOR 0.10 0.02 16° 13° max. Designed for use in 1.70 electronic ballast applications max. 10° max. • SEMEFAB DESIGNED AND DIFFUSED DIE 6.7 6.3 3.1 • HIGH VOLTAGE 2.9 • FAST SWITCHING 4 • HIGH ENERGY RATING 3.7 7.3

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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