BUL903ED . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUL903ED
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70 W
Tensión colector-base (Vcb): 900 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar BUL903ED
BUL903ED Datasheet (PDF)
bul903ed.pdf
BUL903EDHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR INTEGRATED ANTISATURATION ANDPROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOREMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED32 ARCING TEST SELF PROTECTED1APPLICATIONS TO-220 LAMP ELECTRONIC BALLAST
bul903edfp.pdf
BUL903EDFPHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR INTEGRATED ANTISATURATION ANDPROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOREMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED32 ARCING TEST SELF PROTECTED1 FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR
bul903.pdf
BUL903ED HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR INTEGRATED ANTISATURATION ANDPROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOREMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED32 ARCING TEST SELF PROTECTED1APPLICATIONSTO-220 LAMP ELECTRONIC BALLAST F
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
