MJD32CT4A Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJD32CT4A
Código: MJD32C
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 10
Encapsulados: DPAK
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MJD32CT4A datasheet
mjd32ct4-a.pdf
MJD32CT4-A Automotive-grade low voltage PNP power transistor Datasheet - production data Features AEC-Q101 qualified Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31CT4-A 3 Applications 1 General purpose linear and switching DPAK equipment Description The device is manufactured in planar technology Figure 1. Inte
mjd32ct4g.pdf
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl
mjd31 njvmjd31t4g mjd31c njvmjd31ct4g mjd32 njvmjd32t4g mjd32c njvmjd32cg njvmjd32ct4g.pdf
njvmjd31ct4g-vf01 njvmjd32ct4g-vf01.pdf
NJVMJD3xxT4G-VF01 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching www.onsemi.com applications. Features SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves POWER TRANSISTORS Straight Lead Version in Plastic Sleeves ( 1 Suffix) 3 AMPERES Lead Formed Version in 16 mm
Otros transistores... MD1802FX, MD1803DFP, MD1803DFX, MD2001FX, MD2009DFX, MD2103DFP, MD2310FX, MJD31CT4A, 2SD313, MJD45H11T4A, ST13003DK, ST13003K, ST13005, ST13005N, ST13007, ST13007D, ST13007DFP
History: HBC114YS6R | GES3694
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