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MJD45H11T4A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJD45H11T4A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: DPAK

 Búsqueda de reemplazo de transistor bipolar MJD45H11T4A

 

MJD45H11T4A Datasheet (PDF)

 ..1. Size:569K  st
mjd44h11t4a mjd45h11t4a.pdf

MJD45H11T4A
MJD45H11T4A

MJD44H11T4-AMJD45H11T4-AComplementary power transistors .Features The devices are qualified for automotive applicationTAB2 Low collector-emitter saturation voltage Fast switching speed3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1DPAKApplicationsTO-252 Power amplifier Switching circuitsFigure 1. Internal sche

 4.1. Size:210K  st
mjd45h11t4-a.pdf

MJD45H11T4A
MJD45H11T4A

MJD44H11T4-AMJD45H11T4-AComplementary power transistors .Features The devices are qualified for automotive applicationTAB2 Low collector-emitter saturation voltage Fast switching speed3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1DPAKApplicationsTO-252 Power amplifier Switching circuitsFigure 1. Internal sche

 4.2. Size:148K  onsemi
mjd45h11t4g.pdf

MJD45H11T4A
MJD45H11T4A

MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le

 6.1. Size:192K  motorola
mjd44h11 mjd45h11.pdf

MJD45H11T4A
MJD45H11T4A

Order this documentMOTOROLAby MJD44H11/DSEMICONDUCTOR TECHNICAL DATANPN*MJD44H11Complementary PowerPNPMJD45H11 *TransistorsDPAK For Surface Mount Applications*Motorola Preferred Device. . . for general purpose power and switching such as output or driver stages inSILICONapplications such as switching regulators, converters, and power amplifiers.POWER TRANSISTORS

 6.2. Size:395K  st
mjd44h11 mjd45h11.pdf

MJD45H11T4A
MJD45H11T4A

MJD44H11, MJD45H11Complementary power transistorsDatasheet - production data .Features Low collector-emitter saturation voltageTAB Fast switching speed 2 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4")31ApplicationsDPAKTO-252 Power amplifier Switching circuitsDescriptionFigure 1. Internal schematic diagramThese d

 6.3. Size:158K  fairchild semi
mjd45h11.pdf

MJD45H11T4A
MJD45H11T4A

April 2010MJD45H11PNP Epitaxial Silicon TransistorApplications General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount ApplicationsFeatures Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK: -I Suffix) Electrically Similar to Popular MJE45HD-PAK I-PAK11 Fast Switching Spe

 6.4. Size:236K  nxp
mjd45h11.pdf

MJD45H11T4A
MJD45H11T4A

MJD45H1180 V, 8 A PNP high power bipolar transistor12 September 2019 Product data sheet1. General descriptionPNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device(SMD) plastic package.NPN complement: MJD44H112. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Elect

 6.5. Size:286K  onsemi
mjd45h11.pdf

MJD45H11T4A
MJD45H11T4A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.6. Size:148K  onsemi
mjd45h11-1g.pdf

MJD45H11T4A
MJD45H11T4A

MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le

 6.7. Size:148K  onsemi
mjd45h11g.pdf

MJD45H11T4A
MJD45H11T4A

MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le

 6.8. Size:148K  onsemi
njvmjd44h11 njvmjd45h11.pdf

MJD45H11T4A
MJD45H11T4A

MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le

 6.9. Size:148K  onsemi
mjd45h11rlg.pdf

MJD45H11T4A
MJD45H11T4A

MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le

 6.10. Size:126K  onsemi
mjd44h11 mjd45h11.pdf

MJD45H11T4A
MJD45H11T4A

MJD44H11 (NPN),MJD45H11 (PNP)Complementary PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters,SILICONand power amplifiers.POWER TRANSISTORSFeatures8 AMPERES Lead Formed for Surface Mount Application in Plastic Slee

 6.11. Size:243K  inchange semiconductor
mjd45h11.pdf

MJD45H11T4A
MJD45H11T4A

isc Silicon PNP Power Transistors MJD45H11DESCRIPTIONLow Collector-Emitter Saturation Voltage: V )= 1.0V(Max)@ I = 8ACE(sat CFast Switching SpeedsComplement to Type MJD44H11DPAK for Surface Mount ApplicationsMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for general pourpose power amplification andswitchi

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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