2N5681SM Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5681SM
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 230 MHz
Capacitancia de salida (Cc): 50 pF
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO252
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2N5681SM datasheet
2n5681smd05.pdf
2N5681SMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 100V IC = 1A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab her
2n5679 2n5680 2n5681 2n5682.pdf
DATA SHEET 2N5679 2N5680 PNP 2N5681 2N5682 NPN COMPLEMENTARY SILICON HIGH POWER TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5679 Series types are complementary silicon high power transistors manufactured by the epitaxial planar process and designed for general-purpose amplifier and switching applications where high voltages are required. MAXIMUM RATIN
2n5679 2n5680 2n5681 2n5682.pdf
IS/ISO 9002 IS / IECQC 700000 Lic# QSC/L- 000019.2 IS / IECQC 750100 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681 2N5680 2N5682 PNP NPN TO-39 TO-39 Boca Semiconductor Corp. BSC These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL 2N5
Otros transistores... 2N5675 , 2N5676 , 2N5677 , 2N5678 , 2N5679 , 2N568 , 2N5680 , 2N5681 , 2N2907 , 2N5682 , 2N5683 , 2N5684 , 2N5685 , 2N5686 , 2N5687 , 2N5688 , 2N5689 .
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