STD1805 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STD1805
Código: D1805
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 150 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 50 pF
Ganancia de corriente contínua (hfe): 85
Paquete / Cubierta: DPAK IPAK
Búsqueda de reemplazo de transistor bipolar STD1805
STD1805 Datasheet (PDF)
std1805.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
STD1805LOW VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORPRELIMINARY DATAOrdering Code Marking ShipmentSTD1805T4 D1805 Tape & ReelSTD1805-1 D1805 Tube VERY LOW COLLECTOR TO EMITTERSATURATION VOLTAGE3 HIGH CURRENT GAIN CHARACTERISTIC 321 FAST-SWITCHING SPEED1 THROUGH-HOLE IPAK (TO-251) POWERPACKAGE IN TUBE (Suffix "-1")IPAK DPAK SURFACE-MOUNTING DPAK (TO-252)
std180n4f6.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
STD180N4F6 N-channel 40 V, 2.5 m typ., 80 A STripFET F6 Power MOSFET in a DPAK package Datasheet - preliminary data Features Order code V R max. I P DS DS(on) D TOTSTD180N4F6 40 V 2.8 m 80 A 130 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1: Internal schematic diagram Applications
std1802.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
STD1802Low voltage fast-switching NPN power transistorFeatures Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252) power 3package in tape & reel (suffix T4)1 TO-252Description DPAKThe device is manufactured in Planar technology (suffix T4)with Base Island l
std1802t4-a.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
STD1802T4-ALow voltage fast-switching NPN power transistorFeatures This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic3 Fast-switching speed1 Surface-mounting DPAK (TO-252) power TO-252package in tape & reel (suffix T4) DPAK (suffix T4)DescriptionThe device
std1802.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistor STD1802DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V )= 0.4V(Max)( I = 3A; I = 0.15A)CE(sat C BDC Current Gain -h = 100(Min)@ I = 3AFE CFast -Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCCFL dirversVoltage regulatorsRelay dirversHigh efficiency l
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
![STD1805](https://alltransistors.com/images/us.png)
![STD1805](https://alltransistors.com/images/es.png)
![STD1805](https://alltransistors.com/images/ru.png)
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS | HSA1037AKR | HSA1037AKQ