STD2805 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STD2805
Código: D2805
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 60 pF
Ganancia de corriente contínua (hfe): 85
Paquete / Cubierta: DPAK
- Selección de transistores por parámetros
STD2805 Datasheet (PDF)
std2805.pdf

STD2805Low voltage fast-switching PNP power transistorPreliminary DataFeatures Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252) power 33package in tape & reel (suffix T4)211 Through-hole IPAK (TO-251) power package TO-252 TO-251in tube (suffix -1)DPAK IP
std2805.pdf

isc Silicon PNP Power Transistor STD2805DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V )= -0.6V(Max)( I = -5A; I = -0.25A)CE(sat C BDC Current Gain -h = 85(Min)@ I = -5AFE CFast -Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCCFL dirversVoltage regulatorsRelay dirversHigh efficienc
std28p3llh6.pdf

STD28P3LLH6Automotive P-channel 30 V, 0.024 typ., 12 A, STripFET VIDeepGATE Power MOSFET in a DPAK packageDatasheet-target specificationFeaturesRDS(on) Order code VDS max ID PTOTTABSTD28P3LLH6 30 V 0.030 (1) 12 A 40 W321. @ VGS= 10 V1 Designed for Automotive applicationsDPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on)
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SA332 | 2N2193S | 2SD29 | 2SD696A | DMBT2907A | BD355C | 2SA1381C
History: 2SA332 | 2N2193S | 2SD29 | 2SD696A | DMBT2907A | BD355C | 2SA1381C



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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