BC807U . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BC807UPNP Silicon AF Transistor Array For AF input stages and driver applications43 High current gain 5261 Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistor with good matching in on package Pb-free (RoHS compliant) package Qualified according AEC Q101C1 B2 E26 5 4TR2TR11 2 3E1 B1 C2EHA07175Type Markin

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC80716LT1/DBC807-16LT1General Purpose TransistorsPNP SiliconBC807-25LT1COLLECTOR3BC807-40LT12BASE13EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 45 VCollectorBase Voltage VCBO 50 V CASE 31808, STYLE 6SOT23 (TO236AB)EmitterBase Voltag

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BC807PNP general purpose transistor1999 Apr 08Product specificationSupersedes data of 1997 Feb 28Philips Semiconductors Product specificationPNP general purpose transistor BC807FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302BC807DSPNP general purpose double transistorProduct data sheet 2002 Nov 22Supersedes data of 2002 Aug 09NXP Semiconductors Product data sheetPNP general purpose double transistor BC807DSFEATURES QUICK REFERENCE DATA High current (500 mA)SYMBOL PARAMETER MAX. UNIT 600 mW total power dissipationVCEO colle

BC807; BC807W; BC32745 V, 500 mA PNP general-purpose transistorsRev. 06 17 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistors.Table 1. Product overviewType number Package NPN complementNXP JEITABC807 SOT23 - BC817BC807W SOT323 SC-70 BC817WBC327[1] SOT54 (TO-92) SC-43A BC337[1] Also available in SOT54A and SOT54 va

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D187BC807WPNP general purpose transistor1999 May 18Product specificationSupersedes data of 1997 Jun 09Philips Semiconductors Product specificationPNP general purpose transistor BC807WFEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector

BC807-25BC807-40SMALL SIGNAL PNP TRANSISTORSPRELIMINARY DATAType MarkingBC807-25 5BBC807-40 5C SILICON EPITAXIAL PLANAR PNPTRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPES AREBC817-25 AND BC817-40 RESPECTIVELYSOT-23APPLICATIONS WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH

BC807/BC808Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages3 Complement to BC817/BC8182SOT-2311. Base 2. Emitter 3. Collector PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage : BC807 -50 V: BC808 -30 VVCEO Collector-

BC807DSPNP/PNP general purpose double transistors3 May 2019 Product data sheet1. General descriptionPNP/PNP general-purpose double transistors in an SOT457 (SC-74) plastic package.NPN/NPN complement: BC817DSNPN/PNP complement: BC817DPN2. Features and benefits Reduces component count Reduces pick and place costs AEC-Q101 qualified3. Applications General purpos

BC807-25QA; BC807-40QA45 V, 500 mA PNP general-purpose transistorsRev. 1 30 August 2013 Product data sheet1. Product profile1.1 General description500 mA PNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType number Package NPN complement

BC807H series45 V, 500 mA PNP general-purpose transistorsRev. 1 5 March 2019 Product data sheet1. Product profile1.1. General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package NPN comlementNexperia JEDECBC807-16H SOT23 TO-236AB BC817K-16HBC807-25H BC817K-25HB

BC807RA45 V, 500 mA PNP/PNP general-purpose double transistors14 September 2018 Product data sheet1. General descriptionPNP/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268)Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: BC817RANPN/PNP complement: BC817RAPN2. Features and benefits Reduces component count Reduces pick

BC807L; BC807LW45 V, 500 mA PNP general-purpose transistorsRev. 1 5 January 2018 Product data sheet1 Product profile1.1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) or SOT323 (SC-70)Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number PackageNexperia JEITA JEDECBC807-16L SOT23 - TO-236ABBC807-25LBC807-40L

BC807 series45 V, 500 mA PNP general-purpose transistorsRev. 7 15 June 2018 Product data sheet1 Product profile1.1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package NPNcomplementNexperia JEDEC JEITABC807 SOT23 TO-236AB - BC817BC807-16 BC817-16BC807-

BC807K series45 V, 500 mA PNP general-purpose transistorsRev. 2 24 April 2018 Product data sheet1 Product profile1.1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package NPN complementNexperia JEDECBC807K-16 SOT23 TO-236AB BC817K-16BC807K-25 BC817K-25BC8

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC807-25QA; BC807-40QA45 V, 500 mA PNP general-purpose transistorsRev. 1 30 August 2013 Product data sheet1. Product profile1.1 General description500 mA PNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType number Package NPN complement

BC807-25QA; BC807-40QA45 V, 500 mA PNP general-purpose transistorsRev. 1 30 August 2013 Product data sheet1. Product profile1.1 General description500 mA PNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType number Package NPN complement

BC807W series45 V, 500 mA PNP general-purpose transistorsRev. 7 3 July 2018 Product data sheet1 Product profile1.1 General descriptionPNP general-purpose transistors in a very small SOT323 (SC-70) Surface-MountedDevice (SMD) plastic package.Table 1. Product overviewType number Package NPN complementNexperia JEDEC JEITABC807W SOT323 - SC-70 BC817WBC807-16W BC817-16WBC

BC807/BC808 PNP EPITAXIAL SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONSSOT-23 Sutable for AF-Driver stages and low power output stages Complement to BC817/BC818ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Emitter Voltage :BC807 VCES -50 V:BC808 -30 VCollector Emitter Voltage :BC807 VCEO -45 V:BC808 -25 VEmitter-Base Voltage

BC 807-16WPNP Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC817W, BC818W (NPN)Type Marking Ordering Code Pin Configuration PackageBC 807-16W 5As Q62702-C2325 1 = B 2 = E 3 = C SOT-323BC 807-25W 5Bs Q62702-C2326 1 = B 2 = E 3 = C SOT-323BC 807-40W 5Cs Q6

BC807-16/ -25/ -40 PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Ideally Suited for Automatic Insertion A SOT-23 Epitaxial Planar Die Construction CDim Min Max For Switching, AF Driver and Amplifier Applications A 0.37 0.51 Complementary NPN Types Available (BC817) B CB 1.20 1.40 Lead, Halogen and

BC807-16W / -25W / -40WPNP SURFACE MOUNT TRANSISTORLead-free GreenFeatures Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier ApplicationsSOT-323 Complementary NPN Types Available (BC817-xxW)Dim Min Max Lead Free By Design/RoHS Compliant (Note 1)AA0.25 0.40 "Green" Device (Note 2)CB1.15 1.35Mechanic

SOT23 PNP SILICON PLANARBC807MEDIUM POWER TRANSISTORSBC808ISSUE 4 JUNE 1996 T I D T I 8 D 8 8 E 8 8 8 C 8 8 8 8 8 8 B T T 8 8 8 8 8 8SOT23ABSOLUTE MAXIMUM RATINGS. T 8 8 8 IT II V I V V II i V I V V i V I V V I I i II I I I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DIT

BC807-16W/ -25W/ -40W45V PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT323 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound Complementary NPN Types Available (BC817-xxW) UL Flammability Classification Rating 94V-0 For Switching and AF Amplifier Applica

BC807-16/-25/-40 45V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound Complementary NPN Types Available (BC817) UL Flammability Classification Rating 94V-0 For switching and AF Amplifier Applications

BC807-16 THRU BC807-40Features Halogen free available upon request by adding suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPNP Small Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Signal Transistor 300mWMaximum RatingsSOT-23 Operating Junction Temperature Range: -55 to

BC807-16MCCMicro Commercial ComponentsTMBC807-2520736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BC807-40Phone: (818) 701-4933Fax: (818) 701-4939FeaturesPNP Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)General Purpose Capable of 0.3Watts of Power Dissipation. Collector-curren

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

BC807-25W, BC807-40WGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andCOLLECTORPPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant 1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitColl

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

DATA SHEETwww.onsemi.comGeneral PurposeCOLLECTORTransistors 3PNP Silicon1BASEBC807-16L, BC807-25L,2BC807-40LEMITTERFeatures S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2CompliantSOT-23CASE 318

BC807-25W, BC807-40WGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andCOLLECTORPPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant 1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitColl

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

BC807-16LT1G,BC807-25LT1G,BC807-40LT1GGeneral PurposeTransistorshttp://onsemi.comPNP SiliconCOLLECTOR3Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitCollector - Emitter Voltage VCEO -45 V3Collector - Base Voltage VCBO -50 VEmitter - Base Voltage VEBO -5.0 V12Col

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

BC807-25W, BC807-40WGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andCOLLECTORPPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant 1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitColl

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

UNISONIC TECHNOLOGIES CO., LTD BC807/BC808 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to BC817 / BC818 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3BC807G-xx-AE3-R SOT-23 E B C Tape ReelBC807G-xx-AL3-R SOT-323 E B C Tape ReelBC808G-xx-A

BC807PNP Silicon TransistorDescriptions PIN Connection High current application Switching application C Features B Suitable for AF-Driver stage and Elow power output stages Complementary Pair with BC817 SOT-23 Ordering Information Type NO. Marking Package Code0 LA BC807 SOT-23 Device Code hFE Rank Year&Week C

BC807FPNP Silicon TransistorDescriptions PIN Connection High current application Switching application 3 Features 1 Suitable for AF-Driver stage and low power output stages 2 SOT-23F Complementary Pair with BC817F Ordering Information Type NO. Marking Package Code LA BC807F SOT-23F Device Code hFE Rank Year&

BC807 -16W, -25W, -40W -500 mA, -50 V PNP Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES Ideally suited for automatic insertion AL Epitaxial planar die construction 33 Complementary to BC817W Top View C B11 22K EPACKAGE INFORMATION Weight: 0.00

BC807-16, -25, -40 -500 mA, -50 V PNP Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen-free & RoHS compliant FEATURES Ideally suited for automatic insertion SOT-23 Epitaxial planar die construction Collector3Dim Min Max Complementary to BC817 (NPN Type) A 2.800 3.0401BaseB 1.200 1.4002

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BC807BC808SILICON PLANAR EPITAXIAL TRANSISTORSPNP transistorMarkingBC807 = 5DBC80716 = 5ABC80725 = 5BBC807-40 = 5CBC808 = 5HBC80816 = 5EBC80825 = 5FBC80840 = 5GPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOL

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC807 TRANSISTOR (PNP) SOT-23 FEATURE Ldeally suited for automatic insertion Epitaxial planar die construction 1. BASE Complementary NPN type available(BC817) 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-

SEMICONDUCTOR BC807WTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURESM B MComplementary to BC817W.DIM MILLIMETERS_+A 2.00 0.20D2_+B 1.25 0.15_+C 0.90 0.1031D 0.3+0.10/-0.05_E 2.10 + 0.20G 0.65MAXIMUM RATING (Ta=25)H 0.15+0.1/-0.06CHARACTERISTIC SYMBOL RATING UNIT J 1.30K 0.00~0

SEMICONDUCTOR BC807TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURESL B LDIM MILLIMETERSComplementary to BC817._+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25)J 0.13+0.10/-0.05K 0.00 ~ 0.10CHARACTERISTIC SYMBOL RATING UNITQ

SEMICONDUCTOR BC807ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERSComplementary to BC817A._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25)J 0.13+0.10/-0.05K 0.00 ~ 0.10CHARACTERISTIC SYMBOL RATING UNIT

BC807WTRANSISTOR (PNP) BC807-16WSOT-23 BC807-25W BC807-40WFEATURES 1. BASE Ldeally suited for automatic insertion 2. EMITTER epitaxial planar die construction 3. COLLECTOR complementary NPN type available(BC817) MARKING: 807-16:5A; 807-25:5B; 807-40:5C MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltag

BC807TRANSISTOR (PNP) BC807-16SOT-23 BC807-25 BC807-40 FEATURES 1. BASE Ldeally suited for automatic insertion 2. EMITTER epitaxial planar die construction 3. COLLECTOR complementary NPN type available(BC817) MARKING: 807-16:5A; 807-25:5B; 807-40:5C MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -

BC8 07TRANSISTOR (PNP) BC807-16SOT-23 BC807-25 BC807-40 FEATURES 1. BASE Ldeally suited for automatic insertion 2. EMITTER epitaxial planar die construction 3. COLLECTOR complementary NPN type available(BC817) MARKING: 807-16:5A; 807-25:5B; 807-40:5C MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM807-16 GM807-25 GM807-40MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSRatingCharacteristic Symbol Unit Collector-Emitter VoltageVCEO -45 Vdc

BC807-16BC807-25BC807-40 1. BASE SOT-23 Transistor (PNP)2. EMITTER 3. COLLECTOR SOT-23Features Ldeally suited for automatic insertion epitaxial planar die construction complementary NPN type available(BC817) MARKING: 807-16:5A; 807-25:5B; 807-40:5C MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50

BC807-16W BC807-25W BC807-40W SOT-323 Transistor(PNP)1. BASE 2. EMITTER SOT-3233. COLLECTOR FeaturesLdeally suited for automatic insertion epitaxial planar die construction complementary to BC817W MARKING: 16W:5A; 25W:5B; 40W:5C MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Em

BC807-16/-25/-40 PNP General Purpose Amplifier1. BASE 2. EMITTER3. COLLECTORFEATURES A For general AF applications E Complementary NPN type available K BBC817 High collector current JD High current gain G Low collector-emitter saturation voltage HORDERING INFORMATION CType No. Marking Package Code BC807-16 5A SOT-23 BC807-25 5B SOT-23 BC8

BC807-16/BC807-25BC807-40COLLECTOR3General Purpose Transistor MARKING DIAGRAM3PNP Silicon1BASE122 SOT-23EMITTER( T =25 C unless otherwise noted)Maximum Ratings ASymbolRating Value UnitVCEO-45 VCollector-Emitter VoltageVCBOCollector-Base Voltage -50 VEmitter-Base VOltageVEBO-5.0 VCollector Current-Continuous IC 500 mAdcThermal Characteristics

BC807-16WBC807-25WBC807-40WCOLLECTORGeneral Purpose Transistor 33PNP Silicon11P b Lead(Pb)-FreeBASE22EMITTERSOT-323(SC-70)MaximumRatings (TA=25Cunless otherwise noted)Rating Symbol Value UnitVCEOCollector-Emitter Voltage -45 VCollector-Base Voltage VCBO -50 VEmitter-Base Voltage -5.0 VVEBOICCollector Current-Continuous 500mATotal Device Diss

WILLASBC807-xxLT1General Purpose TransistorsPNP SiliconFEATURECollector current capability IC = -500 mA.Collector-emitter voltage VCEO(max) = -45 V.General purpose switching and amplification.PNP complement: BC807 Series.We declare that the material of product compliance with RoHS requirements.SOT23 RoHS product for packing code suffix "G" Halogen free product for pac

FM120-M WILLASBC807-40WT1THRUGeneral Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize bo

Spec. No. : C905N3 Issued Date : 2003.07.29 CYStech Electronics Corp.Revised Date : 2005.05.10 Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BC807N3Description The BC807N3 is designed for general purpose switching and amplification applications. It is housed in the SOT-23/SC-59 package which is designed for low power surface mount applications. Low

BC807Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features I BC817 CHigh IC ,complementary pair with BC817. / Applications General power amplifier and switching applications /

BC807 / BC808-AH PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the NPN transistors BC817 and BC818 are recommended. TO-236 Plastic Package Features AEC-Q101 Qualified and PPAP Capable Halogen and A

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURELBC807-16LT1G Collector current capability IC = -500 mA.LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.LBC807-40LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Au

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC807-16LT1GLBC807-25LT1GPNP SiliconLBC807-40LT1GFEATURES-LBC807-16LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V.S-LBC807-25LT1G General purpose switching and amplification.S-LBC807-40LT1G PNP complement: LBC807 Series. We declare that the material of product complia

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.LBC807-40WT1GDEVICE MARKING AND ORDERING INFORMATIONS-LBC807-40WT1GDevice Marking Package Shipping LBC807-40WT1GYL SOT-323 3000/Tape&ReelS-

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE LBC807-25WT1GS-LBC807-25WT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement: LBC807 Series.3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE LBC807-25WT1GS-LBC807-25WT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement: LBC807 Series.3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other

LESHAN RADIO COMPANY, LTD.LBC807-16DMT1GLBC807-25DMT1GDual General Purpose TransistorsLBC807-40DMT1GPNP DualsS-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC807-25 DMT1G S- Prefix for Automotive and Other Applications Requiring Unique SiteS-LBC807-40DMT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capab

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE Collector current capability IC = -500 mA. LBC807-16WT1G Collector-emitter voltage VCEO(max) = -45 V. S-LBC807-16WT1G General purpose switching and amplification. PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Automotive and Other

LBC807-40WT1GS-LBC807-40WT1GPNP Silicon General Purpose Transistors1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevic

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURELBC807-25LT1GLBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.3 PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.12DEVICE MARKIN

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V.LBC807-40LT1G General purpose switching and amplification.S-LBC807-16LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.S-LBC8

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V.LBC807-40LT1G General purpose switching and amplification.S-LBC807-16LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.S-LBC8

LESHAN RADIO COMPANY, LTD.LBC807-16DMT1GLBC807-25DMT1GDual General Purpose TransistorsLBC807-40DMTPNP DualsS-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC807-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique SiteDMT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC807-4

LESHAN RADIO COMPANY, LTD.LBC807-16DMT1GLBC807-25DMT1GDual General Purpose TransistorsLBC807-40DMT1GPNP DualsS-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC807-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC807-40DMT

SEMICONDUCTORBC807STECHNICAL DATAGeneral Purpose TransistorsPNP SiliconFEATURECollector current capability IC = -800 mA.3Collector-emitter voltage VCEO(max) = -45 V.General purpose switching and amplification.2NPN complement : BC817 Series.1SOT23DEVICE MARKING AND ORDERING INFORMATIONDevice Marking ShippingBC807S-A 5A1 3000/Tape&ReelBC807S-B H5B 3000/Tape&Re

SMD Type TransistorsPNP Transistors BC807DS (KC807DS)( )SOT-23-6 Unit: mm+0.10.4 -0.16 5 4 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-45V1 2 36 5 4+0.020.15 -0.02+0.01-0.01+0.2-0.1Q2Q11 E1 4 E21 2 32 B1 5 B23 C2 6 C1 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -

SMD Type TransistorsPNP TransistorsBC807W (KC807W) Features Ldeally suited for automatic insertion Epitaxial planar die construction Complementary to BC817W1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -45 V Emitter - Base Voltage VEBO -5

SMD Type TransistorsPNP Transistors BC807 (KC807)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 Ldeally suited for automatic insertion Epitaxial planar die construction Complementary NPN type available(BC817)1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rat

SMD Type TransistorsSMD TypePNP TransistorsBC807A (KC807A)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesFor general AF applications.1 2High collector current. +0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1High current gain.Low collector-emitter saturation voltage.1.Base2.Emitter Complementary NPN type available(BC817A)3.collectorAbsolute Maximum

PBC807-16W-AU / BC807-25W-AU / BC807-40W-AU Silicon PNP General Purpose Transistors SOT-323 Unit: inch(mm) Voltage -45V Current -500mA Features Silicon PNP Epitaxial type Excellent DC current gain characteristics General purpose amplifier application AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 6124

BC80716~BC80740PNP GENERAL PURPOSE TRANSISTORS45 Volt POWER 330 mWattVOLTAGEFEATURES0.120(3.04) General purpose amplifier applications0.110(2.80) PNP epitaxial silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive)0.056(1.40) Green molding compound as per IEC61249 Std. .0.047

KBC807 16/25/40C P N P S i l i c o n T r a n s i s t o r 2018.08.06 2018.08.06 2018.08.06 2018.08.06 1 000 2017.07.22 2 001 2018.01.12 3 BV 002 2018.08.

BC807PNP Silicon Epitaxial Planar TransistorsSOT-23 FEATURE Ldeally suited for automatic insertion Epitaxial planar die construction 1. BASE Complementary NPN type available(BC817) 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V V Emitter-Base

RUMW UMW BC807SOT-23 Plastic-Encapsulate Transistors BC807 TRANSISTOR (PNP) SOT-23 FEATURE Ldeally suited for automatic insertion Epitaxial planar die construction 1. BASE Complementary NPN type available(BC817) 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-

BC807/BC808-16/-25/-40PNP TransistorFeaturesSOT-23 For switching, AF driver and amplifier applications These transistors are subdivided into three groups-16, -25 and -40, according to their current gain. Ascomplementary types the NPN transistors BC817 andBC818 are recommended1 Base 2. Emitter 3. CollectorAbsolute Maximum Ratings (T =25, unless otherwisenoted)APa

SOT-23 PNP Plastic-Encapsulate Transistors AS-3140050SOT-23 PNP Plastic-Encapsulate Transistors AS-3140050SOT-23 PNP Plastic-Encapsulate Transistors AS-3140050

BC807SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )FeaturesSOT- 23 High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC817 (NPN) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V V Collector-Emitter Voltage -45 V CEOCV Emitter-Base Voltage -5 V EBOI Collector Current C-

www.msksemi.comBC807-16/-25/-40Semiconductor CompianceSemiconductor CompianceSOT-23 FEATURE Ldeally suited for automatic insertion Epitaxial planar die construction 1. BASE Complementary NPN type available(BC817) 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-E

Jingdao Microelectronics co.LTD BC807 BC807SOT-23PNP TRANSISTOR3FEATURES Ldeally suited for automatic insertion Epitaxial planar die construction Complementary NPN type available(BC817)1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2Parameter Symbol Value Unit1.BASECollectorBase Voltage VCBO -50

BC807 SeriesTRANSISTOR (PNP)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Ldeally suited for automatic insertion Epitaxial planar die construction Complementary NPN type available(BC817)MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -45 VEmi

BC807 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features BC817 ; Complementary to BC817 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

BC807BC807BC807BC807BC8 0 7 TRANSISTOR(PNP)FEATURESSOT-23 Ideally Suited for Automatic InsertionEpitaxial Planar Die Construction1BASE 2EMITTER For Switching, AF Driver and Amplifier3COLLECTOR ApplicationsMARKING:BC807-16:5AComplementary NPN Types Available (BC817)BC807-25:5BBC807-40:5CMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para

RoHS COMPLIANT BC807-16W THRU BC807-40W PNP General Purpose Amplifier Features Capable of 0.2Watts(TA=25) of Power Dissipation Collector-current -0.5A Collector-base Voltage -50VEpoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking: BC807-16W 5A BC807-2

RoHS RoHSCOMPLIANT COMPLIANTBC807-16Q THRU BC807-40Q PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Mechanical Data : SOT-23 Case Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marki

RoHS COMPLIANT BC807-16 THRU BC807-40 PNP General Purpose Amplifier Features Capable of 0.3Watts(TA=25) of Power Dissipation Collector current -0.5A Collector-base Voltage -50VEpoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking: BC807-16 5A BC807-25 5

BC807 BC807 SOT-23 Plastic-Encapsulate Transistors (PNP) General description SOT-23 Plastic-Encapsulate Transistors (PNP) FEATURES Complementary to BC817 Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 Mounting Position: Any DEVICE MARKING CODE: Maximum Ratings & Thermal Charact

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDBC807FEATURES PNP Low Frequency AmplifierTransistorMAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageV -45 VCEOCollector-Base VoltageV -50 VCBO-Emitte

BC807BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to BC817 High Collector Current Epitaxial planar die construction High current gain Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwis

BC807-16 BC807-25 BC807-40 FeaturesLdeally suited for automatic insertion epitaxial planar die construction complementary NPN type available(BC817) MARKING: 807-16:5A; 807-25:5B; 807-40:5C SOT-23 ADim Min MaxC0.37 0.51 AB C B1.20 1.40 C2.30 2.50TOP VIEWB ED0.89 1.03DEGE0.45 0.60G1.78 2.05MAX

INCHANGE Semiconductorisc Silicon PNP General Purpose Transistors BC807-40DESCRIPTIONHigh current(max. 500mA)Low Voltage(Min. 45V)NPN complement BC817-25Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose switching and amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect