BC817SU . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BC817SUNPN Silicon AF Transistor For general AF applications43 High collector current 5261 High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBC817SU B6s1=E 2=C 3=C 4=C 5=C 6=B SC74Maximum RatingsParameter Symbol Value Unit45 VCollect

SEMICONDUCTORBC817STECHNICAL DATAGeneral Purpose TransistorsMAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage V CEO 45 VCollectorBase Voltage V CBO 50 V3EmitterBase Voltage V EBO 5.0 V2Collector Current Continuous I C 500 mAdc1SOT23THERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR 5 Board, (1) P D3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC81716LT1/DBC817-16LT1General Purpose TransistorsNPN SiliconBC817-25LT1COLLECTOR3BC817-40LT12BASE13EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 45 VCollectorBase Voltage VCBO 50 V CASE 31808, STYLE 6SOT23 (TO236AB)EmitterBase Voltage VEBO

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BC817NPN general purpose transistor1999 Jun 01Product specificationSupersedes data of 1997 Mar 12Philips Semiconductors Product specificationNPN general purpose transistor BC817FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302BC817DPNNPN/PNP general purpose transistorProduct data sheet 2002 Nov 22Supersedes data of 2002 Aug 09NXP Semiconductors Product data sheetNPN/PNP general purpose transistor BC817DPNFEATURES QUICK REFERENCE DATA High current (500 mA)SYMBOL PARAMETER MAX. UNIT 600 mW total power dissipationVCEO collector

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102BC817WNPN general purpose transistor1999 Apr 15Product specificationSupersedes data of 1997 Mar 05Philips Semiconductors Product specificationNPN general purpose transistor BC817WFEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302BC817DSNPN general purpose double transistorProduct data sheet 2002 Nov 22Supersedes data of 2002 Aug 09NXP Semiconductors Product data sheetNPN general purpose double transistor BC817DSFEATURES QUICK REFERENCE DATA High current (500 mA)SYMBOL PARAMETER MAX. UNIT 600 mW total power dissipationVCEO colle

BC817; BC817W; BC33745 V, 500 mA NPN general-purpose transistorsRev. 06 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors.Table 1. Product overviewType number Package PNP complementNXP JEITABC817 SOT23 - BC807BC817W SOT323 SC-70 BC807WBC337[1] SOT54 (TO-92) SC-43A BC327[1] Also available in SOT54A and SOT54 va

BC817-25BC817-40SMALL SIGNAL NPN TRANSISTORSPRELIMINARY DATAType MarkingBC817-25 6BBC817-40 6C SILICON EPITAXIAL PLANAR NPNTRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPES AREBC807-25 AND BC817-40 RESPECTIVELYSOT-23APPLICATIONS WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH

BC817/BC818Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages3 Complement to BC807/BC8082SOT-2311. Base 2. Emitter 3. Collector NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector Emitter Voltage : BC817 50 V: BC818 30 VVCEO Collector Em

November 2006BC817/BC818tmNPN Epitaxial Silicon TransistorFeatures Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages3 Complement to BC807/ BC808 2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage : BC817 50

BC817-25QA; BC817-40QA45 V, 500 mA NPN general-purpose transistorsRev. 1 3 September 2013 Product data sheet1. Product profile1.1 General description500 mA NPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType number Package PNP compleme

BC817RA45 V, 500 mA NPN/NPN general-purpose double transistors14 September 2018 Product data sheet1. General descriptionNPN/NPN general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268)Surface-Mounted Device (SMD) plastic package.PNP/PNP complement: BC807RANPN/PNP complement: BC817RAPN2. Features and benefits Reduces component count Reduces pick

BC817DPNNPN/PNP general purpose transistor27 November 2019 Product data sheet1. General descriptionNPN/PNP general-purpose double transistors in an SOT457 (SC-74) plastic package.2. Features and benefits Reduces component count Reduces pick and place costs AEC-Q101 qualified3. Applications General purpose switching and amplification4. Quick reference dataTabl

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BC817NPN general purpose transistor1999 Jun 01Product specificationSupersedes data of 1997 Mar 12Philips Semiconductors Product specificationNPN general purpose transistor BC817FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector

BC817-25QA; BC817-40QA45 V, 500 mA NPN general-purpose transistorsRev. 1 3 September 2013 Product data sheet1. Product profile1.1 General description500 mA NPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType number Package PNP compleme

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302BC817DSNPN general purpose double transistorProduct data sheet 2002 Nov 22Supersedes data of 2002 Aug 09NXP Semiconductors Product data sheetNPN general purpose double transistor BC817DSFEATURES QUICK REFERENCE DATA High current (500 mA)SYMBOL PARAMETER MAX. UNIT 600 mW total power dissipationVCEO colle

BC817-25QA; BC817-40QA45 V, 500 mA NPN general-purpose transistorsRev. 1 3 September 2013 Product data sheet1. Product profile1.1 General description500 mA NPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType number Package PNP compleme

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC817W series45 V, 500 mA NPN general-purpose transistorsRev. 7 11 June 2018 Product data sheet1 Product profile1.1 General descriptionNPN general-purpose transistors in a very small SOT323 (SC-70) Surface-MountedDevice (SMD) plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEDEC JEITABC817W SOT323 - SC-70 BC807WBC817-16W BC807-16WB

BC817 series45 V, 500 mA NPN general-purpose transistorsRev. 7 18 June 2018 Product data sheet1 Product profile1.1 General descriptionNPN general-purpose transistors in a small SOT23 Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEDEC JEITABC817 SOT23 TO-236AB - BC807BC817-16 BC807-16BC817-25 BC807-25

BC817KH series45 V, 500 mA NPN general-purpose transistorsRev. 1 15 December 2017 Product data sheet1 Product profile1.1 General descriptionNPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEDECBC817K-16H SOT23 TO-236AB -BC817K-25H -BC817K-40H -

BC817K series45 V, 500 mA NPN general-purpose transistorsRev. 2 6 March 2018 Product data sheet1 Product profile1.1 General descriptionNPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEDECBC817K-16 SOT23 TO-236AB BC807K-16BC817K-25 BC807K-25BC81

BC817/BC818 NPN EPITAXIAL SILICON TRANSISTORSOT-23SWITCHING AND AMPLIFIER APPLICATIONS Sutable for AF-Driver stages and low power output stages Complement to BC807/BC808ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Emitter Voltage :BC817 VCES 50 V:BC818 30 VCollector Emitter Voltage :BC817 VCEO 45 V:BC818 25 VEmitter-Base Voltage VEB

BC 817-16WNPN Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807W, BC808W (PNP)Type Marking Ordering Code Pin Configuration PackageBC 817-16W 6As Q62702-C2320 1 = B 2 = E 3 = C SOT-323BC 817-25W 6Bs Q62702-C2278 1 = B 2 = E 3 = C SOT-323BC 817-40W 6Cs Q6

BC817-16 / -25 / -40NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Ideally Suited for Automated Insertion Case: SOT-23 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 For Switching, AF

BC817-16Q /-25Q /-40Q 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT23 stringent requirements of automotive applications. Case Material: Molded Plastic, Green Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Featu

BC817-16W / -25W / -40WLead-free GreenNPN SURFACE MOUNT SMALL SIGNAL TRANSISTORFeatures Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier ApplicationsSOT-323 Complementary PNP Types Available (BC807-xxW)Dim Min Max Lead Free By Design/RoHS Compliant (Note 1)AA0.25 0.40 "Green" Device (Note 2)CB1.15 1

BC817-16/-25/-40 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound; Complementary PNP Types Available (BC807) UL Flammability Classification Rating 94V-0 For switching and AF Amplifier Applications

BC817-16Q /-40Q 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data Case: SOT23 This Bipolar Junction Transistor (BJT) is designed to meet the Case Material: Molded Plastic, Green Molding Compound; UL stringent requirements of Automotive Applications. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Feature

BC817-16W/-25W/-40W 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT323 Epitaxial Planar Die Construction Case Material: molded plastic, Green molding compound Complementary PNP Types: BC807-xxW UL Flammability Classification Rating 94V-0 For switching and AF Amplifier Applications Moi

BC817-16Q / -25Q / -40Q 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data Case: SOT23 This Bipolar Junction Transistor (BJT) is designed to meet the Case Material: Molded Plastic, Green Molding Compound; UL stringent requirements of Automotive Applications. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020

SOT23 NPN SILICON PLANARBC817MEDIUM POWER TRANSISTORSBC818ISSUE 4 june 1996 T I D T I 8 D 8 8 8 8 8 EC 8 8 8 8 8 8 B T T 8 8 8 8 8 8SOT23ABSOLUTE MAXIMUM RATINGS. T 8 8 8 IT II V I V V II i V I V V i V I V V I I i II I I I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT

BC817UPNNPN Silicon AF Transistor Array For AF stages and driver applications43 High current gain 5261 Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistors in one package Pb-free (RoHS compliant) package Qualified according AEC Q101C1 B2 E26 5 4Tape loading orientationTR2Marking on SC74 package TR1

BC817K.../BC818K...NPN Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBC817K-16 6As 1 = B 2 = E 3 = C - - - SOT23 BC817K-16W 6As 1 = B 2 = E 3 = C - - - SOT323 BC817K-25 6Bs

BC817K.../BC818K...NPN Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBC817K-16 6As 1 = B 2 = E 3 = C - - - SOT23 BC817K-16W 6As 1 = B 2 = E 3 = C - - - SOT323 BC817K-25 6Bs

BC817UNPN Silicon AF Transistor Array For AF stages and driver applications43 High current gain 5261 Low collector-saturation voltage Two (galvanic) internal isolated transistors with good matching in one package Pb-free (RoHS compliant) package Qualified according AEC Q101C1 B2 E26 5 4TR2TR11 2 3E1 B1 C2EHA07178Type Marking Pin Config

BC817DPNFeatures Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1NPN/PNP Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral PurposeCompliant. See Ordering Information)TransistorsMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Ran

BC817-16MCCMicro Commercial ComponentsTM THRU20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BC817-40Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Small Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Signal Transistor Epox

BC817-16MCCMicro Commercial ComponentsTM THRU20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BC817-40Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Small Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Signal Transistor Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity L

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorswww.onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Compliant

BC817-40W45 V, 0.5 A, GeneralPurpose NPN TransistorON Semiconductors BC817-40W is a General Purpose NPNTransistor that is housed in the SC-70/SOT-323 package.Featureswww.onsemi.com AEC-Q101 Qualified and Consult Factory for PPAP Capable This Device is Pb-Free, Halogen Free/BFR Free and is RoHSCOLLECTORCompliant31BASEMAXIMUM RATINGS (TA = 25C)Rating Symbo

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian

BC817-16LT1G,BC817-25LT1G,BC817-40LT1GGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO 45 V3Collector - Base Voltage VCBO 50 VEmitter - Base Voltage VEBO 5.0 V12Collect

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian

BC817-16LT1G,BC817-25LT1G,BC817-40LT1GGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO 45 V3Collector - Base Voltage VCBO 50 VEmitter - Base Voltage VEBO 5.0 V12Collect

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorswww.onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Compliant

BC817-40W45 V, 0.5 A, GeneralPurpose NPN TransistorON Semiconductors BC817-40W is a General Purpose NPNTransistor that is housed in the SC-70/SOT-323 package.Featureswww.onsemi.com NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 This Device is Pb-Free, Halogen Fre

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian

BC817-16LT1G,BC817-25LT1G,BC817-40LT1GGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO 45 V3Collector - Base Voltage VCBO 50 VEmitter - Base Voltage VEBO 5.0 V12Collect

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

UNISONIC TECHNOLOGIES CO., LTD BC817 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A. ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3BC817G-xx-AE3-R SOT-23 E B C Tape ReelBC817G-xx-AL3-R SOT-323 E B C T

BC817NPN Silicon TransistorDescriptions PIN Connection High current application Switching application 3 Features 1 Suitable for AF-Driver stage and low power 2 output stages SOT-23 Complementary pair with BC807 Ordering Information Type NO. Marking Package Code NA BC817 SOT-23 Device Code hFE Rank Year&Wee

BC817FNPN Silicon TransistorDescriptions PIN Connection High current application Switching application 3 Features 1 Suitable for AF-Driver stage and low power output stages 2 SOT-23F Complementary pair with BC807F Ordering Information Type NO. Marking Package Code NA BC817F SOT-23F Device Code hFE Rank Year&Week Code

BC817 -16, -25, -40 500 mA, 50 V NPN Plastic Encapsulate Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES For general AF applications ACollector L3 High collector current 33 High current gain Top View C B Low collector-emitter saturation voltage 11 1 2 Complementary ty

BC817 -16W, -25W, -40W 500 mA, 50 V NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES For general AF applications AL High collector current 33 High current gain Top View C B Low collector-emitter saturation voltage 11 22K EPACKAGE INFORMATI

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BC817BC818SILICON PLANAR EPITAXIAL TRANSISTORSNPN transistorsMarkingPACKAGE OUTLINE DETAILSBC817 = 6DALL DIMENSIONS IN mmBC817-16 = 6ABC817-25 = 6BBC817-40 = 6CBC818 = 6HBC818-16 = 6EBC818-25 = 6FBC818-40 = 6GPin configuration1 = BASE2 =

TRANSISTOR (NPN) 1. BASE 2. EMITTER For general AF applications 3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) a

JIANGSUCHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors BC817W TRANSISTOR (NPN) SOT-323 FEATURES For General AF Applications High Collector Current High Current Gain Low Collector-Emitter Saturation Voltage 1. BASE 2. EMITTER 3. COLLECTOR MAXMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Uni

SEMICONDUCTOR BC817TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERSComplementary to BC807._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25 )J 0.13+0.10/-0.05K 0.00 ~ 0.10CHARACTERISTIC SYMBOL RATING UNITL 0.5

SEMICONDUCTOR BC817WTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURESM B MComplementary to BC807W.DIM MILLIMETERS_+A 2.00 0.20D2_B 1.25 + 0.15_+C 0.90 0.1031D 0.3+0.10/-0.05_E 2.10 + 0.20MAXIMUM RATING (Ta=25 ) G 0.65H 0.15+0.1/-0.06CHARACTERISTIC SYMBOL RATING UNIT J 1.30K 0.00~0.10V

SEMICONDUCTOR BC817ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERSComplementary to BC807A._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25 )J 0.13+0.10/-0.05K 0.00 ~ 0.10CHARACTERISTIC SYMBOL RATING UNITL 0

BC817TRANSISTOR (NPN) BC817-16 BC817-25 BC817-40 SOT-23 FEATURES 1. BASE For general AF applications 2. EMITTER High collector current 3. COLLECTOR High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V

BC8 1 7 TRANSISTOR (NPN) BC817-16 BC817-25 BC817-40 SOT-23 FEATURES 1. BASE For general AF applications 2. EMITTER High collector current 3. COLLECTOR High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM817-16 GM817-25 GM817-40MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSRatingCharacteristic Symbol Unit Collector-Emitter VoltageVCEO 45 Vdc

BC817-16 BC817-25BC817-40 SOT-23 Transistor(NPN)1. BASE 2. EMITTER 3. COLLECTOR SOT-23Features For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V Dimen

BC817-16/-25/-40 NPN General Purpose AmplifierFEATURES 1. BASE For general AF application. A SOT-23 2. EMITTERDim Min Max Complementary PNP type available 3. COLLECTORA 2.70 3.10EBC807. B 1.10 1.50K B High collector current, high current gain. C 1.0 TypicalD 0.4 Typical Low collector-emitter saturation voltage. E 0.35 0.48JDG 1.80 2.00ORDERING

BC817-16/BC817-25BC817-40COLLECTOR3General Purpose Transistor3NPN Silicon11BASE2SOT-232EMITTER( T =25 C unless otherwise noted)M aximum R atings ARating SymbolUnitValueVCEO 45Collector-Emitter Voltage VdcVCBO VdcCollector-Base Voltage50VEBO Vdc5.0Emitter-Base VoltagemAdcCollector Current-Continuous IC500Thermal CharacteristicsChara

FM120-M WILLASTHRUBC817-40WT1General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize

WILLASBC817-xxLT1General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements. RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H"MAXIMUM RATINGSSOT23Rating Symbol Value UnitCollectorEmitter Voltage V CEO 45 VCollectorBase Voltage V CBO 50 VEmitterBase Voltage V E

Spec. No. : C906N3 Issued Date : 2003.05.12 CYStech Electronics Corp.Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BC817N3Description The BC817N3 is designed for general purpose switching and amplification applications. Complementary to BC807N3. Features High current (max. 500mA) Low voltage (max 45V). Symbol Outline BC81

BC817Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features I BC807 CHigh IC ,complementary pair with BC807. / Applications Purpose: General power amplifier and switching application.

BC817-25BC817-40SMALL SIGNAL NPN TRANSISTORSPRELIMINARY DATAType MarkingBC817-25 6BBC817-40 6C SILICON EPITAXIAL PLANAR NPNTRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPES AREBC807-25 AND BC817-40 RESPECTIVELYSOT-23APPLICATIONS WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH

BC817 / BC818 NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier application, These transistors are subdivided into three groups -16, -25, -40 according to their current gain. As complementary types, the PNP transistors BC807 and BC808 are recommended. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollec

LESHAN RADIO COMPANY, LTD.LBC817-16DMT1GLBC817-25DMT1GDual General Purpose TransistorsLBC817-40DMT1GNPN DualsS-LBC817-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-40DM

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC817-16DPMT1GLBC817-25DPMT1GNPN/PNP DualsLBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-25DPMT1GS-LBC

LESHAN RADIO COMPANY, LTD.LBC817-16DMT1GLBC817-25DMT1GDual General Purpose TransistorsLBC817-40DMT1GNPN DualsS-LBC817-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-40DMT

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC817-16DPMT1GLBC817-25DPMT1GNPN/PNP DualsLBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-25DPMT1GS-LBC

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC817-16DPMT1GLBC817-25DPMT1GNPN/PNP DualsLBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-25DPMT1GS-LBC

LESHAN RADIO COMPANY, LTD.General Purpose Transistors We declare that the material of product compliance with RoHS requirements.LBC817-25WT1G3MAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage V CEO 45 VCollectorBase Voltage V CBO 50 VSC-70 EmitterBase Voltage V EBO 5.0 VCollector Current Continuous I C 500 mAdcTHERMAL CHARACTERISTICS

LBC817-40WT1GS-LBC817-40WT1GNPN Silicon General Purpose Transistors1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevic

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements.LBC817-40WT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-40WT1G3MAXIMUM RATINGSRating Symbol Value Unit12CollectorEmit

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC817-16DPMT1GLBC817-25DPMT1GNPN/PNP DualsLBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-25DPMT1GS-LBC

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC817-16LT1GLBC817-25LT1G We declare that the material of product compliance with RoHS requirements.LBC817-40LT1G3MAXIMUM RATINGSRating Symbol Value Unit 1CollectorEmitter Voltage V CEO 45 V 2CollectorBase Voltage V CBO 50 VSOT23 EmitterBase Voltage V EBO 5.0 VCollector Current Contin

LESHAN RADIO COMPANY, LTD.LBC817-16LT1GLBC817-25LT1GGeneral Purpose TransistorsLBC817-40LT1GNPN SiliconS-LBC817-16LT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-25LT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-40LT1G3MA

LESHAN RADIO COMPANY, LTD.LBC817-16DMT1GLBC817-25DMT1GDual General Purpose TransistorsLBC817-40DMT1GNPN DualsS-LBC817-16DMT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique SiteS-LBC817-25DMT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-40DMT

LESHAN RADIO COMPANY, LTD.LBC817-16LT1GLBC817-25LT1GGeneral Purpose TransistorsLBC817-40LT1GNPN SiliconS-LBC817-16LT1GS-LBC817-25LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site andS-LBC817-40LT1GControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.3MA

LESHAN RADIO COMPANY, LTD.LBC817-16DPMT1GLBC817-25DPMT1GDual General Purpose TransistorsLBC817-40DPMT1GNPN/PNP DualsS-LBC817-16DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-25DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC

LESHAN RADIO COMPANY, LTD.LBC817-16LT1GGeneral Purpose TransistorsLBC817-25LT1GLBC817-40LT1GNPN SiliconS-LBC817-16LT1GS-LBC817-25LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-LBC817-40LT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3MAX

LESHAN RADIO COMPANY, LTD.General Purpose Transistors We declare that the material of product compliance with RoHS requirements.LBC817-16WT1G S- Prefix for Automotive and Other Applications Requiring Unique Site S-LBC817-16WT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3MAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage V

BC817 SERIES General Purpose TransistorsBC817-16/25/40LGBC817-16LG,BC817-25LG,BC817-40LGSERIESFeatures 3 Pb-Free Packages are Available12Maximum RatingsRating Symbol Value UnitSOT-23Collector-Emitter Voltage VCEO 45 VCollector-Base Voltage VCBO 50 VCOLLECTOREmitter-Base Voltage VEBO 5.0 V 3Collector Current - Continuous IC 500 mAdc1BASE2EMITTERDevi

BC817 SERIES General Purpose TransistorsBC817-16/25/40LGBC817-16LG,BC817-25LG,BC817-40LGSERIESFeatures 3 Pb-Free Packages are Available12Maximum RatingsRating Symbol Value UnitSOT-23Collector-Emitter Voltage VCEO 45 VCollector-Base Voltage VCBO 50 VCOLLECTOREmitter-Base Voltage VEBO 5.0 V 3Collector Current - Continuous IC 500 mAdc1BASE2EMITTERDevi

SMD Type TransistorsNPN TransistorsBC817 (KC817)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features For general AF applications Low collector-emitter saturation voltage1 2 Complementary types: BC807 (PNP)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SMD Type TransistorsNPN TransistorsBC817W (KC817W) Features For General AF Applications High Collector Current High Current Gain Low Collector-Emitter Saturation Voltage Complementary to BC807W1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Volt

SMD Type TransistorsNPN TransistorsBC817A (KC817A)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesFor general AF applications.High collector current.1 2High current gain.+0.1+0.050.95 -0.1 0.1 -0.01Low collector-emitter saturation voltage. +0.11.9 -0.1 Complementary PNP type available(BC807A)1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta

BC817 SERIESNPN GENERAL PURPOSE TRANSISTORSVOLTAGE 45 Volt POWER330 mWFEATURES General purpose amplifier applications0.120(3.04) NPN epitaxial silicon, planar design 0.110(2.80) Collector current IC = 500mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)0.056(1.40)0.047(1.20)MECHANICA

PBC817-16-AU / BC817-25-AU / BC817-40-AU Silicon NPN General Purpose Transistors SOT-23 Unit: inch(mm) 45V 500mA Voltage Current Features Silicon NPN Epitaxial type Excellent DC current gain characteristics General purpose amplifier application AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 Stan

General Purpose TransistorsBC817-16-G/25-G/40-G (NPN)RoHS DeviceFeatures -For general AF applications.SOT-23 -High collector current.0.119(3.00) -High current gain.0.110(2.80) -Low collector-emitter saturation voltage.30.056(1.40)Marking: 0.047(1.20)BC817-16-G: 6A1 20.006(0.15)BC817-25-G: 6B0.083(2.10)0.002(0.05)0.066(1.70)BC817-40-G: 6C0.044(1.10)

General Purpose TransistorsBC817-16-G/25-G/40-G (NPN)RoHS DeviceFeatures -For general AF applications.SOT-23 -High collector current.0.119(3.00) -High current gain.0.110(2.80) -Low collector-emitter saturation voltage.30.056(1.40)Marking: 0.047(1.20)BC817-16-G: 6A1 20.006(0.15)BC817-25-G: 6B0.083(2.10)0.002(0.05)0.066(1.70)BC817-40-G: 6C0.044(1.10)

KBC817 16/25/40C N P N S i l i c o n T r a n s i s t o r 2018.03.02 2018.03.02 2018.03.02 2018.03.02 1 000 2018.03.02 AUK Dalian 1 KBC817 16/25/40C NPN Silicon Transistor Descriptions

BC817NPN Silicon Epitaxial Planar Transistors For general AF applications 1. BASE High collector current 2. EMITTER High current gain 3. COLLECTOR Low collector-emitter saturation voltage Complementary types: BC807 (PNP) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 50

RUMW UMW BC817SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1. BASE 2. EMITTER For general AF applications 3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) a

RoHS BC817- 16/ - 25/ 40BC817- 16/ - 25/ 40NPN EPTTAXIAL SILICON TRANSISTORSURFACE MOUNT SMALLSIGANL TRANSISTORSoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacteristicCollector-Emitter VoltageVCEO 45 VVEmitter-Base Voltage VCBO 50mACollector Current Ic 1000Peak Colteetor Current IcM mA1000Peak Fmitter Current IEM mA800oPDPower Dissipation

BC817-16/-25/-40NPN TransistorFeaturesSOT-23 For switching, AF driver and amplifier applications These transistors are subdivided into three groups-16, -25 and -40, according to their current gain. Ascomplementary types the PNP transistors BC817 arerecommended1 Base 2. Emitter 3. CollectorAbsolute Maximum Ratings (TA=25, unless otherwisenoted)Parameter Symbol Valu

BC817-40 BC817-16 BC817-25 SOT-23 NPN Plastic-Encapsulate Transistors FEATURES For general AF applications High collector current T-23 SO High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-B

HD ST0.3SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )FeaturesSOT- 23For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V CV Collector-Emitter Voltage 45 V CEOV Emitter

BC817SOT-23 Plastic-Encapsulate TransistorSOT-23 BC817- 16 TRANSISTOR (NPN) BC817- 25 BC817- 40 FEATURES 1. BASE For general AF applications2. EMITTER High collector current 3. COLLECTOR High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) PACKAGE SPECIFICATIONS Box Size QTY/BoxReel DIA. Q'TY/Reel Carton S

www.msksemi.comBC817-16/25/40Semiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)1. BASE 2. EMITTER For general AF applications 3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) hFE

Jingdao Microelectronics co.LTD BC817BC817SOT-23NPN TRANSISTOR3FEATURES For general AF applications High collector current High current gain 1 Low collector-emitter saturation voltage Complementary types: BC807 (PNP)21.BASEMAXIMUM RATINGS (Ta=25 unless otherwise noted)2.EMITTER3.COLLECTORSy

BC817TRANSISTOR (NPN) REV.08 1 of 3BC817REV.08 2 of 3BC817PACKAGE OUTLINE Plastic surface mounted package; 3 leads Plastic surface mounted package; 3 leads SOT-23 REV.08 3 of 3

BC817 SeriesTRANSISTOR (NPN)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP)MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO 50 VCo

BC817 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features BC807 ; Complementary to BC807 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

BC817BC817BC817BC817BC8 17TRANSISTOR(NPN)FEATURE For general AF applications SOT-23 High collector current High current gain 1BASE Low collector-emitter saturation voltage 2EMITTER Complementary types: BC807 (PNP) 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage

RoHS COMPLIANT BC817-16 THRU BC817-40 NPN General Purpose Amplifier Features Capable of 0.3Watts(TA=25) of Power Dissipation Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking: BC817-16 6A BC817-25 6B BC817-40 6C Maximum Rating Item Symbol Unit Va

RoHS COMPLIANT BC817-16W THRU BC817-40W NPN General Purpose Amplifier Features Capable of 0.2Watts(TA=25) of Power Dissipation Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking:BC817-16W 6A BC817-25W 6B BC817-40W 6C Maximum Ratings (Ta=25 Unless

RoHS RoHSCOMPLIANT COMPLIANTBC817-16Q THRU BC817-40Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Mechanical Data : SOT-23 Case Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:

BC817 TRANSISTOR (NPN) 1. BASE 2. EMITTER For general AF applications3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) a Collector-Base Voltage 50 V Collec

BC817 BC817 SOT-23 Plastic-Encapsulate Transistors (NPN) General description SOT-23 Plastic-Encapsulate Transistors (NPN) FEATURES Complementary to BC807 Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 Mounting Position: Any DEVICE MARKING CODE: Maximum Ratings & Thermal Charact

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDBC817FEATURES NPN Low Frequency AmplifierTransistorMAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageV 45 VCEOCollector-Base VoltageV 50 VCBO-Emitter-

BC817BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to BC807 High Collector Current Low Collector-emitter saturation voltage High current gain Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless o

Features Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier ApplicationsA Complementary Types Available (BC )SOT-23CDim Min MaxA0.37 0.51B CB1.20 1.40TOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HMaximum