2SC4370AP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor 2SC4370APDESCRIPTIONTO-220 packageHigh Collector-Emitter Breakdown VoltageV = 180V(Min)CEOComplement to Type 2SA1659APMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4370DESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = 160V(Min)CEOComplement to Type 2SA1659Full-mold package that does not require an insulatingboard or bushing when mounting.100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign

2SC4373 0.8 A , 120 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package. Large Current Capacity. 4123ACLASSIFICATION OF hFE ECProduct-Rank 2SC4373-O 2SC4373-Y B DRange 80~160 120~240 F GMarking CO CY H KJ LPACKAGE INFORMATION

2SC4375 1.5 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package. Low Collector-Emitter Saturation Voltage. 4123ACLASSIFICATION OF hFE ECProduct-Rank 2SC4375-O 2SC4375-YB DRange 100~200 160~320F GMarking GO GYH KJ L

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate TransistorsSOT-89-3L 2SC4373 TRANSISTOR (NPN)1. BASEFEATURES 2. COLLECTOR Small Flat Package Large Current Capacity3. EMITTERMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Bas

2SC4374 SOT-89-3L TRANSISTOR (NPN)1. BASE FEATURES 2. COLLECTOR Small Flat Package Low Collector- Emitter Saturation Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 400 mA PC Collector Power Dissip

2SC4373 SOT-89-3L TRANSISTOR (NPN)1. BASE FEATURES 2. COLLECTOR Small Flat Package Large Current Capacity 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800 mA PC Collector Power Dissipation 500 mW R

2SC4375 SOT-89-3L TRANSISTOR (NPN)1. BASE FEATURES 2. COLLECTOR Small Flat Package Low Collector- Emitter Saturation Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1.5 A PC Collector Power Dissip

ST 2SC4379U NPN Silicon Epitaxial Planar Transistor for power amplification applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 50 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 5 VCollector Current IC 2 ABase Current IB 0.4 A0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150

ST 2SC4378U NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 80 VCollector Emitter Voltage VCEO 60 VEmitter Base Voltage VEBO 5 VCollector Current IC 1 APeak Collector Current ICP 2 A0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150 Storage Temperature Range Tstg

ST 2SC4375U NPN Silicon Epitaxial Planar Transistor High current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 30 VCollector Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5 VCollector Current IC 1.5 A0.5 Ptot W Total Power Dissipation11) Junction Temperature TJ 150 Storage Temperature Range TStg -

2SC4379U NPN Silicon Epitaxial Planar Transistor for power amplification applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 50 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 5 VCollector Current IC 2 ABase Current IB 0.4 A0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150 Sto

SMD Type TransistorsNPN Transistors2SC43731.70 0.1 Features Collector Current Capability IC=800mA Collector Emitter Voltage VCEO=120V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage VEBO 5 Collec

SMD Type TransistorsNPN Transistors2SC43751.70 0.1 Features Collector Current Capability IC=1.5 A Collector Emitter Voltage VCEO=30 V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5 Collecto

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4371DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400(Min)(BR)CEOExcellent Switching Times-: tr= 1.0s(Max), tf= 1.0s(Max)@ I = 4AC100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator applicationHigh vol