2SA2154MFV Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA2154MFV

Código: PY_PG

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 80 MHz

Capacitancia de salida (Cc): 1.6 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: VESM

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2SA2154MFV datasheet

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 2sa2154mfv.pdf pdf_icon

2SA2154MFV

2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154MFV General-Purpose Amplifier Applications Unit mm 1.2 0.05 High voltage and high current 0.80 0.05 VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity 1 hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) 1 High hFE hFE = 120 400 Complementary to 2SC6026MFV 3

 7.1. Size:151K  toshiba
 2sa2154ct.pdf pdf_icon

2SA2154MFV

2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current VCEO = -50V, IC = -100mA (max) Unit mm 0.6 0.05 Excellent hFE linearity 0.5 0.03 hFE (IC = -0.1 mA) / hFE (IC = -2 mA)= 0.95 (typ.) High hFE hFE = 120 to 400 Complementary to 2SC6026CT Absolute M

 7.2. Size:258K  toshiba
 2sa2154ct-y 2sa2154ct-gr.pdf pdf_icon

2SA2154MFV

2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current V = -50V, I = -100mA (max) CEO C Unit mm Excellent h linearity FE h (I = -0.1 mA) / h (I = -2 mA)= 0.95 (typ.) FE C FE C High h h = 120 to 400 FE FE Complementary to 2SC6026CT Absolute Maximum Ratings

 7.3. Size:145K  toshiba
 2sa2154.pdf pdf_icon

2SA2154MFV

2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154 General-Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -100 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 120 400 1 Complementary to 2SC6026 3 2 0.8 0.05 0.1 0.05 1.0 0.05 Ab

MOSTRAR MÁS

Otros transistores... SMBT3904U, SMBT3904UPN, SMBT3906, SMBT3906U, BUL63B, BUL63A, 2SA2154, 2SA2154CT, 2SD669A, 2SA2195, 2SA2214, 2SA2215, 2SA562TM, 2SC1815L, BUL62B, 2SC4666, 2SC4738F