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2SA2154MFV . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA2154MFV
   Código: PY_PG
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 80 MHz
   Capacitancia de salida (Cc): 1.6 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: VESM
 

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2SA2154MFV Datasheet (PDF)

 ..1. Size:151K  toshiba
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2SA2154MFV

2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154MFV General-Purpose Amplifier Applications Unit: mm1.2 0.05 High voltage and high current 0.80 0.05: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity 1 : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) 1 High hFE : hFE = 120~400 Complementary to 2SC6026MFV 3

 7.1. Size:151K  toshiba
2sa2154ct.pdf pdf_icon

2SA2154MFV

2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current : VCEO = -50V, IC = -100mA (max) Unit: mm0.60.05 Excellent hFE linearity 0.50.03 : hFE (IC = -0.1 mA) / hFE (IC = -2 mA)= 0.95 (typ.) High hFE : hFE = 120 to 400 Complementary to 2SC6026CT Absolute M

 7.2. Size:258K  toshiba
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2SA2154MFV

2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current : V = -50V, I = -100mA (max) CEO C Unit: mm Excellent h linearity FE : h (I = -0.1 mA) / h (I = -2 mA)= 0.95 (typ.) FE C FE C High h h = 120 to 400 FE : FE Complementary to 2SC6026CT Absolute Maximum Ratings

 7.3. Size:145K  toshiba
2sa2154.pdf pdf_icon

2SA2154MFV

2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154 General-Purpose Amplifier Applications Unit: mm High voltage and high current : VCEO = -50 V, IC = -100 mA (max) Excellent hFE linearity : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE : hFE = 120~400 1 Complementary to 2SC6026 32 0.80.050.10.051.00.05Ab

Otros transistores... SMBT3904U , SMBT3904UPN , SMBT3906 , SMBT3906U , BUL63B , BUL63A , 2SA2154 , 2SA2154CT , TIP2955 , 2SA2195 , 2SA2214 , 2SA2215 , 2SA562TM , 2SC1815L , BUL62B , 2SC4666 , 2SC4738F .

History: TN4143 | MJD340

 

 
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