2SA2195 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA2195 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2195 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.1 High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) 1 High-speed switching: tf = 90 ns (typ.) 2 3Absolute Maximum Ratings

2SA2190 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor Type 2SA2190 Unit: mmPower Amplifier Applications Driver Stage Amplifier Applications High transition frequency: fT = 200 MHz (typ.) Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO - 180 VCollector-emitter voltage VCEO - 180 VEmitter-base voltage VEBO -

2SA2199 Transistors General Purpose Transistor (-50V, -100mA) 2SA2199 Applications Dimensions (Unit : mm) Small signal low frequency amplifier VMN3 Features 0.220.161) Excellent hFE linearity. (3)2) Complements the 2SC6114. Structure (1) (2)PNP silicon epitaxial 0.370.170.35planar transistor 0.6(1) Base(2) EmitterAbbreviated symbol : P (3) C

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA2198DESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -5ACE(sat) CGood Linearity of hFEAPPLICATIONSDesigned for chopper regulator, switch and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -70 VCBOV Collector-E