2SC5766 Todos los transistores

 8.1. Size:158K  toshiba
 2sc5765.pdf

2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS Unit mm STOROBO FLASH APPLICATIONS Low Saturation Voltage VCE (sat) (1) = 0.27 V (max.) (I = 3 A/I = 60 mA) C B Maximum Ratings (Ta = = 25 C) = = Characteristic Symbol Rating Unit Collector-Base voltage VCBO 15 V Collector-Emitter voltage VCEO 10 V Emitter-Ba

 8.2. Size:31K  sanyo
 2sc5764.pdf

Ordering number ENN6971A 2SC5764 NPN Triple Diffused Planar Silicon Transistor 2SC5764 Switching Regulator Applications Features Package Dimensions High breakdown voltage. unit mm High reliability. 2041A High-speed switching. [2SC5764] Wide ASO. 4.5 10.0 2.8 Adoption of MBIT process. 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Base 2.55 2.55 2 Collector

 8.3. Size:30K  sanyo
 2sc5763.pdf

Ordering number ENN6989A 2SC5763 NPN Triple Diffused Planar Silicon Transistor 2SC5763 Switching Regulator Applications Features Package Dimensions High breakdown voltage. unit mm High reliability. 2010C High-speed switching. [2SC5763] Wide ASO. 10.2 4.5 Adoption of MBIT process. 3.6 5.1 1.3 1.2 0.8 0.4 1 Base 2 Collector 1 2 3 3 Emitter SANY

 8.4. Size:75K  nec
 2sc5761.pdf

DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for low noise high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum stable power gain MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz SiGe technology (fT

 8.5. Size:182K  utc
 2sc5765.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION medium power amplifier applications strobo flash applications FEATURES * Low Saturation Voltage VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

 8.6. Size:177K  inchange semiconductor
 2sc5764.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC5764 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators applications. ABSOLUTE MAXIMUM RA

 8.7. Size:179K  inchange semiconductor
 2sc5763.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC5763 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators applications. ABSOLUTE MAXIMUM RA