HN1A01FU . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HN1A01FU
Código: D1G_D1Y
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: US6
Búsqueda de reemplazo de transistor bipolar HN1A01FU
HN1A01FU Datasheet (PDF)
hn1a01fu.pdf
HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FU Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : V =-50V, I =-150mA (max) CEO C High h : h = 120~400 FE FE Excellent h linearity FE: h (I =-0.1mA) / h (I =-2mA) = 0.95 (typ.) FE C FE CAbsolute Maximum Ratings
hn1a01fu.pdf
SMD Type Transistors PNP TransistorsHN1A01FU (KN1A01FU ) Features High voltage and high current High hFE: hFE = 120~400 Excellent hFE linearity Small package (Dual type) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector
hn1a01fe.pdf
HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FE Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = -50V, IC = -150mA (max) High hFE: hFE = 120~400 Excellent hFE linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C)
hn1a01f.pdf
HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01F Unit: mmAudio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = -50 V, IC = -150 mA (max) High hFE: hFE = 120~400 Excellent hFE linearity : hFE (IC = -0.1 mA) / hFE (IC = -2 mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25
hn1a01fe-y hn1a01fe-gr.pdf
HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FE Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = -50V, IC = -150mA (max) High hFE: hFE = 120 to 400 Excellent hFE linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
