HN1A01FU Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HN1A01FU

Código: D1G_D1Y

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 80 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: US6

 Búsqueda de reemplazo de HN1A01FU

- Selecciónⓘ de transistores por parámetros

 

HN1A01FU datasheet

 ..1. Size:242K  toshiba
 hn1a01fu.pdf pdf_icon

HN1A01FU

HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FU Unit mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current V =-50V, I =-150mA (max) CEO C High h h = 120 400 FE FE Excellent h linearity FE h (I =-0.1mA) / h (I =-2mA) = 0.95 (typ.) FE C FE C Absolute Maximum Ratings

 ..2. Size:811K  kexin
 hn1a01fu.pdf pdf_icon

HN1A01FU

SMD Type Transistors PNP Transistors HN1A01FU (KN1A01FU ) Features High voltage and high current High hFE hFE = 120 400 Excellent hFE linearity Small package (Dual type) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector

 7.1. Size:174K  toshiba
 hn1a01fe.pdf pdf_icon

HN1A01FU

HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FE Unit mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current VCEO = -50V, IC = -150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C)

 7.2. Size:228K  toshiba
 hn1a01f.pdf pdf_icon

HN1A01FU

HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01F Unit mm Audio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current VCEO = -50 V, IC = -150 mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = -0.1 mA) / hFE (IC = -2 mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25

MOSTRAR MÁS

Otros transistores... 2SC6135, 2SC752(G)TM, TTA1586FU, TTC4116FU, 2SA1873, 2SC4944, HN1A01F, HN1A01FE, C1815, HN1A02F, HN1A07F, HN1A26FS, HN1B01F, HN1B01FU, HN1B04F, HN1B04FE, HN1B04FU