HN1A02F Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HN1A02F

Código: 26G_26Y

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 MHz

Capacitancia de salida (Cc): 13 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SM6

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HN1A02F datasheet

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HN1A02F

HN1A02F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A02F Unit mm Audio Frequency Power Amplifier Applications Switching applications High hFE hFE(1) = 120 400 Low VCE(sat.) VCE (sat) = -0.2 V (max.) (IC = -400 mA, IB = -8 mA) Small Power Motor Driver Application. Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol Rating U

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HN1A02F

HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FE Unit mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current VCEO = -50V, IC = -150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C)

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HN1A02F

HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01F Unit mm Audio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current VCEO = -50 V, IC = -150 mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = -0.1 mA) / hFE (IC = -2 mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25

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HN1A02F

Otros transistores... 2SC752(G)TM, TTA1586FU, TTC4116FU, 2SA1873, 2SC4944, HN1A01F, HN1A01FE, HN1A01FU, 2N5401, HN1A07F, HN1A26FS, HN1B01F, HN1B01FU, HN1B04F, HN1B04FE, HN1B04FU, HN1B26FS