HN1A02F Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HN1A02F
Código: 26G_26Y
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 120 MHz
Capacitancia de salida (Cc): 13 pF
Ganancia de corriente contínua (hFE): 120
Encapsulados: SM6
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HN1A02F datasheet
hn1a02f.pdf
HN1A02F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A02F Unit mm Audio Frequency Power Amplifier Applications Switching applications High hFE hFE(1) = 120 400 Low VCE(sat.) VCE (sat) = -0.2 V (max.) (IC = -400 mA, IB = -8 mA) Small Power Motor Driver Application. Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol Rating U
hn1a01fe.pdf
HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FE Unit mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current VCEO = -50V, IC = -150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C)
hn1a01f.pdf
HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01F Unit mm Audio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current VCEO = -50 V, IC = -150 mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = -0.1 mA) / hFE (IC = -2 mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25
Otros transistores... 2SC752(G)TM, TTA1586FU, TTC4116FU, 2SA1873, 2SC4944, HN1A01F, HN1A01FE, HN1A01FU, 2N5401, HN1A07F, HN1A26FS, HN1B01F, HN1B01FU, HN1B04F, HN1B04FE, HN1B04FU, HN1B26FS
History: 2SC4944
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