HN1C01FE . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HN1C01FE
   Código: C1G_C1Y
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 80 MHz
   Capacitancia de salida (Cc): 2 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: ES6

Búsqueda de reemplazo de transistor bipolar HN1C01FE

HN1C01FE Datasheet (PDF)

..1. Size:180K toshiba
hn1c01fe.pdf

HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C01FE Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (Q

7.1. Size:240K toshiba
hn1c01fu.pdf

HN1C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C01FU Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : V = 50V, I = 150mA (max) CEO C High h : h = 120~400 FE FE Excellent h linearity FE: h (I = 0.1mA) / h (I = 2mA) = 0.95 (typ.) FE C FE CAbsolute Maximum Ratings

7.2. Size:237K toshiba
hn1c01f.pdf

HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C01F Unit: mmAudio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = 50 V, IC = 150 mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1 mA) / hFE (IC = 2 mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C)

9.1. Size:207K toshiba
hn1c05fe.pdf

HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C05FE Unit: mmLow Frequency Amplifier Applications Muting Application Switching Application Low Saturation Voltage: VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA High Collector Current :IC=400mA(Max.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCollec

9.2. Size:286K toshiba
hn1c03fu.pdf

HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process) HN1C03FU Unit: mmFor Muting and Switching Applications Including two devices in US6 (ultra super mini type with 6 leads) High emitter-base voltage: V = 25V (min) EBO High reverse h : reverse h = 150 (typ.)(V =-2V, I =-4mA) FE FE CE C Low on resistance: R = 1 (typ.)(I = 5mA) ON BAbsolute Maximum

9.3. Size:132K toshiba
hn1c07f.pdf

HN1C07F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C07F Unit: mmAudio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications Excellent Currrent gain(hFE )linearity : hFE(2) =25 (min) at VCE = 6V IC = 400mA Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCollector

9.4. Size:310K toshiba
hn1c03f.pdf

HN1C03F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C03F For Muting And Switching Applications Unit in mm Including two devices in SM6 (Super mini type with 6 leads) High emitter-base voltage: V = 25V (min) EBO High reverse h : reverse h = 150 (typ.)(V =-2V, I =-4mA) FE FE CE C Low on resistance: R = 1 (typ.)(IB = 5mA) ONAbsolute Maximum Rating

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N4896

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050